Method for manufacturing exposure mask and its application
A manufacturing method and a mask technology, which are applied to the photolithographic process of patterned surfaces, originals for photomechanical processing, and semiconductor/solid-state device manufacturing, etc., which can solve the problems of low product yield of wafer exposure devices, etc.
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no. 1 Embodiment approach
[0034] figure 1 It is a flowchart showing the manufacturing method of the exposure mask of 1st Embodiment of this invention.
[0035] First, 11 mask blanks A to K constituted by forming a light-shielding body coating it on a quartz substrate with a size of 152 mm square and a thickness of about 6 mm were prepared, and for each of these mask blanks A to K, Using the substrate flatness measuring device (Nide ッ Co., Ltd.) to measure the main surface, and obtain the shape and flatness of the main surfaces of the 11 mask blanks A to K before being sucked to the mask table of the exposure apparatus with a vacuum chuck (step S1).
[0036] Here, measured at figure 2 (a) Flatness of a 142 mm square area (first area) 1 excluding the peripheral area of the mask blank. The first area 1 is actually a pattern forming area where patterns are formed.
[0037] In addition, in this embodiment, the unevenness of the surface shape of the first region 1 is as follows: figure 2 (b), figu...
no. 2 Embodiment approach
[0055] In the first embodiment, only for the figure 2 The surface shape and flatness of the first region 1 of the main surface of the mask substrate 1 in (a) are obtained (step S1), and in this embodiment, the first region 1 and the second region surrounding the first region 1 are obtained. These two areas obtain surface shape and flatness.
[0056] Here, the first region 1 is a rectangular region with a length of 142 mm on one side with the center of the mask substrate as the center of the region, and the second region 2 is a mouth-shaped region (from the rectangular region 1) with a length of 150 mm on one side surrounding the first region 1. The area after removing the smaller rectangular area with the center of this rectangular area as the center of the area). When the mask blank 1 is set on the mask stage of the exposure apparatus, the area to be sucked by the vacuum chuck (mask suction area) generally includes the second area 2 . That is, the force for attracting the ...
no. 3 Embodiment approach
[0081] In the present embodiment, the surface shape of the main surface of the mask blank corresponding to the surface shape of the main surface of the mask blank after suction with a vacuum chuck is obtained by simulation.
[0082] First, by using the substrate flatness measuring device (Nide ッ Co., Ltd.) was measured to obtain the surface shape and flatness of the main surface of the mask blank constituted by forming a light-shielding body on a quartz substrate with a size of 152 mm square and a thickness of about 6 mm, and the pattern formation area ( figure 2 (a) flatness of the first region 1), and 13 mask blanks A to M each having different surface shapes and flatness were prepared.
[0083] Afterwards, based on the mask chuck structure of an ArF wafer exposure apparatus (manufactured by Nikon Corporation) and the above-mentioned measured flatness of the main surfaces of the 13 mask substrates A to M, the 13 masks were vacuum chucked using the finite element method. Th...
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