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Multi-layer integrated circuit for join of substrates with wide gaps

A technology of integrated circuits and substrates, which is applied in the system field of the above-mentioned wide gap space

Inactive Publication Date: 2003-01-15
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The non-etched surface is located at a predetermined height from the etched surface

Method used

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  • Multi-layer integrated circuit for join of substrates with wide gaps
  • Multi-layer integrated circuit for join of substrates with wide gaps
  • Multi-layer integrated circuit for join of substrates with wide gaps

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Embodiment Construction

[0021] Preferably removing substrate material from at least one of the substrates by etching rather than by adding spacer material solves the problem of wide gap substrate bonding. This technique allows very large gaps to be made. The modified substrate achieves a multi-layer topography, wherein preferably the etched layers provide areas for circuit elements and the unetched areas provide the interface with the mating substrate. Furthermore, the gap distance is set before performing other processing on the substrate, such as IC fabrication. The present invention allows substrates to be bonded with wide gaps between about 2 microns and about 400 microns, which is well beyond the capabilities of conventional substrate bonding techniques. During the removal of substrate material, the interface between the etched layer and the non-etched layer is preferably formed in the form of a graded slope. By providing a graded slope, a new method of forming interlayer connections can be re...

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Abstract

An integrated circuit (30) includes a substrate (10) having an etched surface and a non-etched surface. The etched surface contains circuit elements (22, 24) and the non-etched surface contains a bonding surface (18). The non-etched surface is located at a predetermined height (12) from the etched surface. Bonding this integrated circuit (30) with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Description

technical field [0001] The present invention relates to a micromachining method for joining substrates to form wide interstitial spaces between portions of the substrates. More specifically, the present invention relates to systems utilizing the wide interstitial spaces described above. technical background [0002] Many applications utilize bonded substrates to integrate various functions fabricated on separate substrates, to utilize different technologies or to save space. Such applications include mass storage devices, display devices, and micromechanical systems (MEMs). Typical MEMs include pressure sensors, accelerometers, and the like. [0003] In several applications utilizing bonded substrates, tightly controlled gaps or spaces are required between the individual bonded substrates for thermal, electrical and mechanical isolation. A conventional solution is to provide interstitial space by adding a spacer material to a predetermined thickness on at least one of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60B81B7/00B81C1/00H01L25/00
CPCH01L2924/0002B81C1/00238B81C1/0023H01L2924/00H01L25/00
Inventor M·J·雷甘J·利贝斯金德C·C·哈卢扎克
Owner TAIWAN SEMICON MFG CO LTD