Process for preparing shallow-channel isolating structure

Abstract

A process for preparing shallow channel isolation (STI) structure includes such steps as providing substrate, generating pad oxide layer and mask layer on the substrate, removing part of pad oxide layer, mask layer and substrate to form a channel in the substrate, chemical gas-phase deposition by high-density plasma with high etching / deposition ratio to depositing insulating layer, depositing again with low etching / deposition ratio, removing the insulating layer except the channel, and removing mask layer and oxide layer.

Description

technical field [0001] The present invention relates to a manufacturing method of an electrically insulating (Electrically insulating) structure, and in particular to a manufacturing method of a shallow trench isolation (Shallow Trench Isolation, STI) structure. Background technique [0002] With the increasing integration of semiconductor devices, the design scale of the devices is shrinking day by day, and the electrical insulation structure in the device, such as the silicon oxide insulating layer, cannot be manufactured by Local Oxidation (LOCOS). One of the most widely used methods today is to manufacture electrical isolation structures by forming shallow trench isolation structures. [0003] Since the High Density Plasma Chemical Vapor Deposition (HDPCVD) method has two functions of "etching" and "deposition", the etching reaction of peeling off the deposit will also be carried out during the deposition, so that The high-density plasma chemical vapor deposition method...

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Problems solved by technology

[0011] However, the high-density chemical vapor deposition method with a high etching / selection ratio has the problem of slow deposition rate. Therefore, although the insulating layer of the shallow trench isolation structure formed by this method can avoid the generation of defect points, it will reduce the productivity. And affect the throughput (Throughput)

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