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Semiconductor luminous element and semiconductor luminous device

A technology for light-emitting elements and semiconductors, which is applied in the fields of semiconductor devices, electrical components, and electro-solid devices, and can solve the problems of reduced light output and reduced light output.

Inactive Publication Date: 2003-04-09
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, multiple reflections of the formed light occur at the top surface on which the electrodes are formed and at the rear surface of the substrate of the conventional light emitting element, so that the light cannot be easily output from the light emitting element.
There is also a problem that light is absorbed at the P-type electrode and the N-type electrode, resulting in a decrease in light output
The light-emitting element of the conventional structure has the disadvantage that the total light output from the light-emitting layer is reduced.

Method used

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  • Semiconductor luminous element and semiconductor luminous device
  • Semiconductor luminous element and semiconductor luminous device
  • Semiconductor luminous element and semiconductor luminous device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0023] figure 1 is a schematic sectional view of the nitride type semiconductor light emitting element according to the first embodiment of the present invention. An N-type gallium nitride compound semiconductor layer 2 and a P-type gallium nitride compound semiconductor layer 3 are laminated on a sapphire substrate 1 that is a translucent substrate. The light emitting element has a thickness of 250 μm, which corresponds to the sapphire substrate 1 , the N-type gallium nitride compound semiconductor layer 2 and the P-type gallium nitride compound semiconductor layer 3 . The P-type electrode 4 and the P-type pad electrode 5 are formed on the P-type gallium nitride compound semiconductor layer 3 . The N-type pad electrode 6 is formed on the N-type gallium nitride compound semiconductor layer 2 . Reflective layer 7 is formed on the back surface of substrate 1 . exist figure 1 In, d indicates the chip thickness of 250 μm of the light emitting element.

[0024] A method of m...

no. 2 example

[0031] figure 2 is a schematic sectional view of a nitride type semiconductor light emitting element according to a second embodiment of the present invention. On a sapphire substrate 1, an N-type gallium nitride compound semiconductor layer 2 and a P-type gallium nitride compound semiconductor layer 3 are laminated. The light emitting element has a thickness of 350 μm, which corresponds to the sapphire substrate 1 , the N-type gallium nitride compound semiconductor layer 2 and the P-type gallium nitride compound semiconductor layer 3 . The P-type electrode 41 and the P-type pad electrode 5 are formed on the light emitting element. A pad electrode 61 for an N-type electrode is formed on the N-type gallium nitride compound semiconductor layer 2 . Reflective layer 7 is formed on the back surface of sapphire substrate 1 . exist figure 2 In, d indicates the chip thickness of 350 μm of the light emitting element.

[0032] A method of manufacturing the nitride type semiconduc...

no. 3 example

[0041] image 3 is a schematic sectional view of a nitride type light emitting element according to a third embodiment of the present invention. On a GaN substrate 1, an N-type gallium nitride compound semiconductor layer 2 and a P-type gallium nitride compound semiconductor layer 3 are laminated. The thickness of the light emitting element is 300 μm, which corresponds to the GaN substrate 1 , the gallium nitride compound semiconductor layer 2 and the P-type gallium nitride compound semiconductor layer 3 . The P-type translucent electrode 4 and the P-type pad electrode 5 are formed on the light emitting element. N-type electrode 6 is formed on GaN substrate 1 . exist image 3 Among them, d indicates the chip thickness of the light-emitting element is 300 μm.

[0042] A method of manufacturing the nitride type semiconductor light emitting element of this embodiment will be described below.

[0043] N-type gallium nitride compound semiconductor layer 2 and p-type gallium ni...

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Abstract

A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 mum to 460 mum.

Description

technical field [0001] The present invention relates to the chip thickness in the stacking direction of the compound semiconductor light-emitting element chip and the reflectivity at the top and bottom surfaces of the chip, wherein the compound semiconductor light-emitting element is stacked on a translucent substrate. In particular, the present invention relates to a light-emitting element from which a large light output is obtained. Background technique [0002] Figure 6 is a schematic cross-sectional view of a conventional light-emitting element structure. On the translucent substrate 100, an N-type nitride compound semiconductor layer 200, a P-type nitride compound semiconductor layer 300, a P-type semi-transparent electrode 400, a P-type pad electrode (pad electrode) 500, and an N-type pad electrode are arranged. Point electrode 600 . The translucent substrate 100 side is provided on the cup bottom of the lead frame with an adhesive. Figure 6 Among them, d indicates...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/42H01L33/62
CPCH01L33/32H01L24/45H01L2224/49107H01L2224/48257H01L2224/45144H01L2224/48091H01L2224/48465H01L2224/73265H01L2224/32245H01L33/405H01L2224/48247H01L24/73H01L2924/00014H01L2924/00012H01L2924/00
Inventor 幡俊雄山本健作笔田麻佑子辰巳正毅
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD