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Wafer dividing method using cleavage

A technology of wafers and manufacturing methods, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as chip thickness limitations, and achieve the effect of suppressing the decline in flexural strength

Inactive Publication Date: 2003-07-23
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the depth of grooves that can be formed by RIE is about 100 microns, and there is a limit to the thickness of chips that can be used

Method used

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  • Wafer dividing method using cleavage
  • Wafer dividing method using cleavage
  • Wafer dividing method using cleavage

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0080] Figure 8 It is a process flow chart for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention. Figure 9A with 9B to Figure 16A with 16B The steps of dividing the wafer into individual chips are sequentially shown. Figure 9A to Figure 16A Is an oblique view, Figure 9B to 16B It is a cross-sectional view.

[0081] First of all, such as Figure 9A with 9B As shown in, various semiconductor elements 12 are formed on the main surface of the wafer 11 using a well-known process (step 1).

[0082] Secondly, such as Figure 10A with 10B As shown in the above-mentioned wafer 11 on the element formation surface 11A side, along the cutting line or the chip dividing line corresponding to the short side of the chip, dicing is performed with a diamond blade 13 or the like to form a chip thickness greater than the desired (completed The thickness of the time) deep groove 14 at the same time as Figure 11A with 11B A...

no. 2 Embodiment

[0098] Figure 19 It is a process flow chart for explaining the semiconductor device manufacturing method according to the second embodiment of the present invention. The difference between this second embodiment and the above-mentioned first embodiment is that in the process of step 2, along the cutting line or chip dividing line corresponding to the short side of the chip, a diamond scribe is used instead of a dicing line. A groove deeper than the desired chip thickness is formed, and a notch that becomes the starting point of cleavage is formed only on the outer peripheral portion of the wafer corresponding to the long side of the chip.

[0099] Since the other basic manufacturing steps are the same as those of the first embodiment, detailed descriptions are omitted.

[0100] Even with such a manufacturing method, basically the same effect as in the first embodiment can be obtained.

no. 3 Embodiment

[0102] Figure 20 It is a process flow chart for explaining the manufacturing method of the semiconductor device according to the third embodiment of the present invention. The third embodiment is different from the above-mentioned first embodiment in that, in the process of step 2, along the cutting line or the chip dividing line corresponding to the short side of the chip, a wire saw is used instead of a dicing. At the same time, a groove with a desired chip thickness and a deep groove is formed only on the outer peripheral portion of the wafer corresponding to the long side of the chip, which becomes the starting point of cleavage.

[0103] Since the other basic manufacturing steps are the same as those of the first embodiment, detailed descriptions are omitted.

[0104] Even with such a manufacturing method, basically the same effects as the above-mentioned first and second embodiments can be obtained.

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Abstract

Notches are formed in a surface of a wafer on which semiconductor elements have been formed. Then, a surface protection tape is stuck to the element-formed surface of the wafer. Subsequently, the wafer is cleaved along a crystal orientation using the notches as starting points. Finally, a back surface of the wafer is ground.

Description

(1) Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a process of dividing a wafer on which semiconductor elements are formed and singulating it into individual chips. (2) Background technology [0002] In the manufacturing process of a semiconductor device, the wafer after forming the elements is separated along a dicing line or a chip dividing line, and singulated into a plurality of chips (also called die or pellet). These chips are adhered to an adhesive sheet, and each chip is picked up from the adhesive sheet in sequence, and the mounting process is completed by the mounting process of mounting on a lead frame or TAB tape or a sealing process of sealing in a package. Semiconductor device. [0003] In recent years, in order to embed chips in a thin package, it is required to reduce the thickness of the chip, and perform grinding and etching to thin the back surface of the wafer. However, if th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/301H01L21/78
CPCH01L21/78H01L21/304
Inventor 田久真也黑泽哲也
Owner KK TOSHIBA