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Substrate drying method and device thereof

A drying method and drying device technology, which are applied to cleaning methods and utensils, separation methods, drying of solid materials, etc., can solve problems such as decreased replacement efficiency, single wafer drying streaks, and foreign matter adhesion.

Inactive Publication Date: 2003-08-06
TOHO KASEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the apparatus of the above-mentioned structure, the foreign matter generated when the single wafer is cleaned with pure water is in the state of floating near the liquid surface of the pure water in the treatment tank, but due to the fact that the pure water in the treatment tank is discharged from the bottom of the treatment tank The single wafer in the treatment tank is exposed and sequentially discharged from the pure water near the bottom of the treatment tank, and the pure water near the liquid surface where the above-mentioned foreign matter floats is discharged last, so there will be a problem in the single wafer from the above-mentioned When the liquid surface is exposed, the above-mentioned floating foreign matter adheres to the surface of the single wafer
[0005] In addition, in the apparatus of the above-mentioned structure, since the single wafer is exposed by discharging pure water from the bottom of the treatment tank, the pure water on the above-mentioned liquid level of the treatment tank will not be discharged to the end, and the solution of IPA on the above-mentioned liquid surface The amount of intake increases as time goes on, and the concentration of IPA in the pure water on the above-mentioned liquid surface and the thickness of the layer where IPA dissolves are also thickened, which reduces the above-mentioned replacement efficiency and thereby reduces the above-mentioned drying efficiency. The problem of dry spots on the surface of the wafer
[0006] In addition, even when the single wafer is exposed by lifting from the above-mentioned pure water surface in the processing tank, the problem of foreign matter adhering to the surface of the single wafer also occurs in the same way. There is a problem of dry spots on the surface of the single wafer due to shaking at the pure water surface

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  • Substrate drying method and device thereof

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no. 1 Embodiment

[0072] The substrate drying apparatus of the first embodiment of the present invention is a single wafer drying apparatus 501 for drying a single wafer as an example of a substrate. figure 1 shows a longitudinal sectional view of a single wafer drying device 501, in figure 2 presented in figure 1 The F-F line profile in the image 3 presented in figure 1 The G-G line profile in. In addition, a flowchart showing a schematic configuration of the single wafer drying apparatus 501 is shown in Figure 4 middle. In addition, the substrate used in the present invention includes a liquid crystal panel substrate and the like other than the above-mentioned single wafer.

[0073] Such as figure 1 , figure 2 , image 3 and Figure 4 As shown, the single wafer drying device 501 includes: a slightly cuboid box shape with four sides and a bottom surface that is fully open above and can store pure water 40 inside, and immerse a plurality of disc-shaped single wafers 2 In the above...

no. 2 Embodiment

[0140] For example, the single wafer drying apparatus 502 as an example of the substrate drying apparatus according to the second embodiment of the present invention is not provided with partitions 250 to divide the drying chamber 201 into The two layers of the upper pure water tank 40a and the lower pure water tank 40b discharge the liquid surface side pure water in the upper pure water tank 40a in the drying chamber 201 where the single wafer 2 is immersed by raising the partition plate 250 by the partition plate elevating mechanism 214, Instead, the liquid surface side pure water is discharged by raising the bottom surface of the drying chamber itself, which is an example of the movable platen, and the other configurations are the same. Hereinafter, only the above-mentioned different parts will be described. In addition, a longitudinal sectional view of the single wafer drying apparatus 502 is shown in Figure 8 will be in Figure 8 The I-I line profile in the is shown in...

no. 3 Embodiment

[0153] Next, the single wafer drying apparatus 503 as an example of the substrate drying apparatus according to the third embodiment of the present invention has a spacer 450 corresponding to the spacer 250 in the above-mentioned first embodiment, and the spacer 450 and the spacer 450 are fixed together. The support position of the single wafer 2 supported by the single wafer holder 13 on the upper surface of the spacer 450 is fixed in the processing chamber using the same bottom lift mechanism 314 as that of the single wafer drying device 502 of the second embodiment above. The lifting mechanism is not only the bottom of the drying chamber, but also the device that discharges the above-mentioned liquid surface side pure water by lowering the entire drying chamber, and the other configurations are the same. Hereinafter, only the parts different from the above are described. In addition, a longitudinal sectional view of the single wafer drying apparatus 503 is shown in Figure...

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Abstract

There are provided a substrate drying method and apparatus by which an attachment amount of particles to surfaces of substrates can be reduced when the substrates are exposed from pure water, and occurrence of non-uniform drying can be prevented by improving drying efficiency of the substrates. Air or an inert gas, and gaseous or droplet-like isopropyl alcohol (hereinafter, referred to as IPA) are supplied into a space on a liquid level of the pure water in a drying chamber, and pure water on a liquid level side is drained from the liquid level or the vicinity of the liquid level of the pure water, while raising the pure water in which the substrates are immersed together with the substrates, the substrates are exposed from the pure water above the liquid level in the drying chamber, and, at the same time, the pure water held on the exposed surfaces of the substrates is replaced by IPA, whereby the substrates are dried.

Description

technical field [0001] The invention relates to a substrate drying method and device for taking out a substrate immersed in pure water from the pure water and then drying the surface of the substrate. Background technique [0002] In the past, in the drying device disclosed in the Japanese Patent Publication No. 6-103686, nitrogen gas was used as a carrier, and IPA (isopropyl alcohol) was used as steam to treat the corrosion treatment liquid and then supply it to the substrate cleaned by pure water. An example of the upper space in the processing tank of a single wafer. Then, by discharging the pure water in the treatment tank from the bottom of the treatment tank, the single wafer in the treatment tank is exposed, and the IPA vapor supplied to the upper space of the treatment tank is replaced with the water droplets adhering to the surface of the exposed single wafer. , so as to dry the surface of the single wafer. [0003] In addition, instead of exposing the single wafe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/306
CPCH01L21/67034Y10S134/902H01L21/02052H01L21/304
Inventor 竹村祯男松田进水江宏明
Owner TOHO KASEI CO LTD