Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Oscillator with voltage control

A voltage-controlled oscillation and voltage-controlled technology, applied in power oscillators, electrical components, impedance networks, etc., can solve the problems of voltage-controlled oscillator Q-value drop, poor stability, and large changes in reactive components over time.

Inactive Publication Date: 2003-10-15
KK TOSHIBA
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the Q value of the reactance element is very low, there is a problem that the Q value of the voltage controlled oscillator further decreases and the phase noise increases further.
In addition, there is a problem that the reactance element changes greatly with time and the stability is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Oscillator with voltage control
  • Oscillator with voltage control
  • Oscillator with voltage control

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and various modifications are possible.

[0064] The inventors of the present invention repeatedly discussed the use of a piezoelectric body using a ferroelectric body as a thin-film piezoelectric resonator from a wide range of theory and experiment. It was found that the ferroelectric material essentially has the property that the speed of sound can be greatly changed by an external electric field. By satisfying several conditions and applying a control voltage to the ferroelectric, the oscillation frequency can be changed.

[0065] Specifically, a ferroelectric material used as a piezoelectric body needs to be a single crystal film whose polarization direction is uniform in the film thickness direction. In order to obtain sufficient piezoelectricity of the ferroelectric film and to change the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The technique subject of the invention is to provide a kind of voltage-controlled oscillator, which has very large variable frequency range, high frequency-stability, low phase noise, very little change after a long period, ultra-small type, and the capability of simultaneously performing oscillation operations of plural frequencies. The film bulk acoustic resonator uses the single crystal ferroelectric, which has the same pole direction as the film thickness direction and a thickness smaller than 10 mum, as the piezoelectric body. By changing the voltage added to the electrode, a voltage-controlled oscillator having a large oscillation frequency variation rate larger than 0.01% / V and very small phase noise is provided.

Description

technical field [0001] The invention relates to a voltage controlled oscillator. Background technique [0002] In recent years, voltage controllers using thin-film piezoelectric resonators have attracted attention. A thin film piezoelectric resonator (FBAR: Film Bulk Acoustic Wave Resonator) is an element in which a lower electrode, a piezoelectric film, and an upper electrode are sequentially formed in a cavity formed on a substrate. [0003] Such a thin-film piezoelectric resonator resonates at a frequency under the condition that the total thickness of the lower electrode, the upper electrode, and the piezoelectric film in contact with the air layer is half the wavelength of the oscillation wavelength. At a frequency of 1 GHz to 5 GHz, the thickness corresponds to a thickness of about 0.5 μm to 3 μm. This is particularly advantageous for resonance in the high-frequency region above GHz. [0004] Figure 27 The impedance change around the resonance frequency of such a t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03B5/32H03H9/00H03H9/17H03H9/54H03H9/56H03H9/58H03H9/60
CPCH03H9/566H03H9/581H03H9/585H03H9/564H03H2009/02196H03H9/60H03H9/562H03H9/545H03H9/173H03H9/0095H03B5/32
Inventor 川久保隆尾原亮一阿部和秀鹤见博史吉田弘藤本竜一
Owner KK TOSHIBA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products