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Semiconductor device with analog capacitor

A technology of semiconductors and capacitors, which is applied in the field of semiconductor devices and their manufacturing, and can solve problems such as damage

Inactive Publication Date: 2003-11-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, the dielectric layer 22 in the second opening 20 will be exposed and damaged

Method used

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  • Semiconductor device with analog capacitor
  • Semiconductor device with analog capacitor
  • Semiconductor device with analog capacitor

Examples

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Embodiment Construction

[0021] The present invention will now be described more fully with reference to the accompanying drawings showing preferred embodiments of the invention. However, the present invention can be implemented in different ways and is not limited to the embodiments described here. These embodiments are provided to disclose the present invention thoroughly and completely, but those skilled in the art should understand that these embodiments cannot fully cover the scope of the present invention.

[0022] Figure 5 is a sectional view of a semiconductor device having a capacitor of the MIM structure according to the first embodiment of the present invention.

[0023] see Figure 5 , the present invention includes a bottom plate electrode 56, and an upper plate electrode 64a overlapped by a part of the bottom plate electrode. The bottom electrode 56 and the upper electrode 64a are made of a metal compound. For example, bottom plate electrode 56 and top plate electrode 64a are formed...

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Abstract

The invention discloses a semiconductor device with an analog capacitor and a manufacturing method thereof. A semiconductor device includes a bottom plate electrode formed on a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped by the bottom plate electrode thereon. Metal compounds are used to form the top and bottom plate electrodes. A capacitor dielectric layer is sandwiched between the bottom and top plate electrodes. The bottom and upper electrode plugs are connected to the bottom and upper plate electrodes through an interlayer dielectric layer. According to the method of the present invention, a bottom plate electrode is formed in a predetermined region of a semiconductor substrate. The upper plate electrode is formed to have a region overlapped by the bottom plate electrode, and a capacitor dielectric layer sandwiched between the bottom and upper plate electrodes is formed. An interlayer dielectric layer is formed on the entire surface of the semiconductor substrate on which the upper plate electrode is formed. Bottom and upper electrode plugs connected to the bottom and upper plate electrodes through the interlayer dielectric layer are formed. Metal compounds are used to form bottom and top plate electrodes.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. More particularly, the present invention relates to a semiconductor device of an analog capacitor having a metal-insulator-metal (MIM) structure and a method of manufacturing the same. Background technique [0002] A recently proposed merged memory logic (MML) is a device in which a memory cell array section such as a dynamic random access memory (DRAM) and an analog circuit or a peripheral circuit are integrated in one chip . The proposal of MML improves the functions of multimedia, and effectively realizes the high integration and high speed of semiconductor devices. However, in an analog circuit requiring high speed, it is most important to develop a semiconductor device having a large number of capacitors. Generally, in the case of a capacitor having a polysilicon / insulator / polysilicon (PIP) structure, since polysilicon is used to form the upper and l...

Claims

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Application Information

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IPC IPC(8): H10B12/00H01L21/02H01L21/3205H01L21/768H01L21/822H01L23/52H01L27/04H01L27/08
CPCH01L21/76802H01L21/76807H01L21/76832H01L21/76834H01L27/0805H01L28/40
Inventor 朴相勋李基永
Owner SAMSUNG ELECTRONICS CO LTD
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