Cleaning liquid composition after chemical and mechanical grinding

Abstract

A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

Description

technical field [0001] The present invention relates to a cleaning solution, in particular to a cleaning solution for the surface of a semiconductor substrate on which metal wiring materials (especially copper) are exposed. [0002] The present invention also relates to a cleaning solution for removing minute particles and metal impurities attached to the surface of a semiconductor substrate after chemical mechanical polishing (CMP), especially in a semiconductor manufacturing step. Background technique [0003] With the high integration of integrated circuits, since trace particles and metal impurities have a great impact on the performance and yield of devices, strict pollution control is required. That is, strict control of particles and metal impurities adhering to the substrate surface is required, and various cleaning solutions are used in each process of semiconductor manufacturing for this purpose. [0004] Generally, there are sulfuric acid-hydrogen peroxide, ammon...

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