Method for correcting convex block outline

A bump, contour technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as device impact
CN1466188AInactive Publication Date: 2004-01-07MACRONIX INT CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
MACRONIX INT CO LTD
Publication Date
2004-01-07
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A method for correcting outline of convex block is first of all to provide a base with a convex block formed, then to process in two steps of deposition to form a high molecular material layer at the sidewall of the projection, which can control its growing from the top to bottom of its sidewall or form the bottom to the top.
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Description

technical field

[0001] The present invention relates to a method for modifying the profile of a bump, and in particular to a method for modifying the profile of a bump by forming a polymer material layer on the sidewall of the bump by using a plasma chemical vapor deposition method . Background technique

[0002] In the semiconductor manufacturing process, the method usually used to pattern the photoresist layer is to use the lithography process. However, if the slight parameter variation in the lithography process is not properly controlled, the profile of the formed photoresist layer pattern may be unsatisfactory. In other words, the profile of the sidewall of the formed photoresist layer may be uneven. In this way, in the subsequent etching process using the photoresist layer as a mask, etching failure may be caused due to the uneven profile of the photoresist layer.

[0003] figure 1 , which is a schematic cross-sectional view of a bump with non-vertical sidewalls; ...

Claims

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