Method for correcting convex block outline

A bump, contour technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as device impact

Inactive Publication Date: 2004-01-07
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And this porosity may cause adverse effects on the device

Method used

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  • Method for correcting convex block outline
  • Method for correcting convex block outline
  • Method for correcting convex block outline

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[0036] Figure 7 and Figure 8 As shown, it is a schematic cross-sectional view of forming a polymer material layer on the bump sidewall by a two-step deposition process according to the second embodiment of the invention.

[0037] Please refer to Figure 7 and Figure 8 , a bump 202 has been formed on a substrate 200 . Wherein, the bump 202 may be a patterned photoresist layer or a patterned conductive layer.

[0038] Next, a two-step deposition process is performed to form a polymer material layer 208 on the sidewall of the bump 202 . Wherein, the present invention can control the growth of the polymer material layer 208 from the top of the sidewall of the bump 202 to the bottom of the sidewall of the bump 202 . The polymer material layer 208 can also be controlled to grow from the bottom of the sidewall of the bump 202 to the top of the sidewall of the bump 202 . In this embodiment, the polymer material layer 208 is formed by a plasma-enhanced chemical vapor depositio...

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Abstract

A method for correcting outline of convex block is first of all to provide a base with a convex block formed, then to process in two steps of deposition to form a high molecular material layer at the sidewall of the projection, which can control its growing from the top to bottom of its sidewall or form the bottom to the top.

Description

technical field [0001] The present invention relates to a method for modifying the profile of a bump, and in particular to a method for modifying the profile of a bump by forming a polymer material layer on the sidewall of the bump by using a plasma chemical vapor deposition method . Background technique [0002] In the semiconductor manufacturing process, the method usually used to pattern the photoresist layer is to use the lithography process. However, if the slight parameter variation in the lithography process is not properly controlled, the profile of the formed photoresist layer pattern may be unsatisfactory. In other words, the profile of the sidewall of the formed photoresist layer may be uneven. In this way, in the subsequent etching process using the photoresist layer as a mask, etching failure may be caused due to the uneven profile of the photoresist layer. [0003] figure 1 , which is a schematic cross-sectional view of a bump with non-vertical sidewalls; ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/285H01L21/312H01L21/768
Inventor 赖俊仁
Owner MACRONIX INT CO LTD
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