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Semiconductor device

A technology of semiconductors and conductors, applied in the field of semiconductor devices, can solve problems affecting reliability, reliability problems, etc.

Inactive Publication Date: 2004-05-26
特利尼提半导体咨询有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Cracks that appear in the interlayer insulating film do not impair the function of the device, but the cracks expand when the device is used, which may cause serious reliability problems and affect its reliability

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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no. 1 example

[0043] The following will combine Figure 5 A semiconductor device according to one embodiment of the present invention will be described.

[0044] Figure 5 is a schematic cross-sectional view of a semiconductor device according to the present embodiment of the present invention, showing its structure.

[0045] The device insulating film 12 is formed on the silicon substrate 10 . Each MOS transistor 14 including a gate and a source / drain diffused layer 16 is formed on a silicon substrate 10 on which the device insulating film 12 is formed. An interlayer insulating film 18 of silicon dioxide, for example doped or undoped with P (phosphorus) or B (boron), is formed on the silicon substrate 10 on which the MOS transistors are formed. Contact plugs 22 such as barrier metal and W (tungsten) are buried in the interlayer insulating film 18 .

[0046] The interlayer insulating film 24 is formed on the interlayer insulating film 18 with a layer structure of, for example, a SiC fil...

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PUM

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Abstract

The semiconductor device comprises an insulating film 114 formed mainly of a film of polyallyl ether resin; an interconnection structure 116 buried in the insulating film 114, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating film 118 formed on the insulating film 114 with the interconnection structure 116 buried in and formed mainly of a film of organosilicate glass; and an interconnection structure 120 buried in the insulating film 118 and connected to the interconnection structure 116. Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.

Description

technical field [0001] The present invention relates to a semiconductor device, which includes an interlayer insulation film of low dielectric material. Background technique [0002] In a semiconductor device manufacturing process, a plurality of elements are formed on one semiconductor wafer, and the semiconductor wafer is diced along dicing lines into individual LSI chips. On the side walls along the dicing lines, interfaces of many interlayer insulating films provided during element formation are exposed. These interfaces are often avenues for water intrusion, causing problems such as erroneous operation and breakage of the semiconductor device, which reduces its reliability. Stress at the cut, and stress due to the difference in coefficient of thermal expansion between the interlayer insulating film and the sealing resin generate cracks in the interlayer insulating film, and the cracks are often passages for water intrusion. [0003] Inside the dicing lines along all t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/3105H01L21/312H01L23/522H01L23/532H01L23/58
CPCH01L21/31053H01L2924/0002H01L23/585H01L23/5329H01L2924/3011H01L2924/00
Inventor 细田勉山上朗
Owner 特利尼提半导体咨询有限公司