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Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

A sputtering target, silicon-based technology, applied in the field of sputtering targets, can solve problems such as pull-off

Inactive Publication Date: 2004-06-02
W C HERAEUS GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The SiAl tube target obtained in this way can only achieve a Si(Al) wall strength of about 6 to 8 mm thick, because in the case of larger thicknesses, the high thermal load during plasma spraying will pull it off

Method used

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  • Processes for producing a sputtering target from a silicon-based alloy, a sputtering target
  • Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

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Embodiment Construction

[0012] A cylindrical graphite mold was produced, which consisted of a graphite core 1 with a diameter of 131 mm and an outer wall 2 with an inner diameter of 158 mm, an outer diameter of 170 mm and a height of 600 mm. An alloy 3 containing 90% by weight (gew.%) of silicon and 10% by weight (gew.%) of aluminum was melted in a vacuum. After complete liquefaction of the alloy components, the temperature of the melt was stabilized at 1430°C. The graphite casting mold preheated to 300° C. is moved into the vacuum melting chamber, and the liquefied alloy is injected into the cavity of the casting mold by means of a casting funnel 4 . After the melt has solidified and the casting has cooled below 300°C, the mold is removed from the furnace. Not only the inner core of the mold, but also its outer shell can be removed from the casting with the aid of a hydraulic press. Saw off the head of the tubular casting approximately 100mm in length. The inner diameter of the casting was turned...

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Abstract

A process for producing a sputtering target from a silicon-based alloy with an aluminum content of 5-50 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

Description

technical field [0001] The invention relates to a method for manufacturing a sputtering target from a silicon-based alloy containing 5-50% by weight (wt.%) of aluminum, a sputtering target and applications thereof. Background technique [0002] The use of silicon-based alloys containing a certain weight percent of aluminum as sputtering targets in thin-film technology has been known for a long time (US5094288A, DE19810246A1). In addition to the flat target used initially, in order to fabricate active sputtered Si 3 N 4 or SiO 2 , often also using rotating targets (EP0070899). Such rotating targets are usually made by plasma spraying (US5853816A). In this method, a support tube is sprayed either with a mixture of elemental powders of Si and aluminum or with powders of their alloys (DE 10140589). [0003] The SiAl tube targets obtained in this way can only achieve a Si(Al) wall strength of approximately 6 to 8 mm thick, since in the case of greater thicknesses they are to...

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Application Information

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IPC IPC(8): B22D18/04B22D15/02B22D27/15C22C28/00C23C14/34
CPCB22D27/15B22D15/02C23C14/3414
Inventor M·魏格特J·海因德尔U·康尼茨卡
Owner W C HERAEUS GMBH