Method for dividing semiconductor wafer

Abstract

A method for dicing a semiconductor wafer wherein a semiconductor wafer (W) with circuits in many regions sectioned by crosswise streets is diced into individual semiconductor chips each having a circuit. The circuit face of the semiconductor wafer (W) is covered with a tape member (10), and a part of the tape member (10) covering the top of the streets is removed by cutting to form a cut groove (11). The semiconductor wafer (W) dear of the part of the tape member (10) covering the top of the crosswise streets is chemically etched to erode the crosswise streets and thus diced into individual semiconductor chips. This economical method enables formation of high quality chips free of cracks or stresses.

Description

technical field [0001] The present invention relates to a method of dividing a semiconductor wafer into individual chips by dividing a semiconductor wafer by chemical etching. Background technique [0002] Figure 12 The shown semiconductor wafer W is integrated with the frame F through the holding tape T. As shown in FIG. On the surface of the semiconductor wafer W, the straights S are arranged at regular intervals in a grid pattern, and circuits are formed in a plurality of rectangular regions divided by the straights S. Also, each semiconductor chip C is formed by cutting the straight line S using a rotary blade. [0003] However, in cutting with a rotary blade, there are problems that fine defects or stress sometimes occur on the outer periphery of the semiconductor chip, the flexural strength decreases due to the defect or stress, and the semiconductor chip is easily damaged due to external force or heating cycle. Damaged, life shortened. For example, in a semiconduc...

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Problems solved by technology

[0003] However, in cutting with a rotary blade, there are problems that fine defects or stress sometimes occur on the outer periphery of the semiconductor chip, the flexural strength decreases due to the defect or stress, and the semiconductor chip is easily damaged due to external force or heating cycle. breakage, shortened lifespan

[0005] However, in this method, in order to expose only the tape member pasted on the upper part of the straights, it is necessary to prepare a plurality of photomasks individually corresponding to the size of the semiconductor wafer W and the distance between the straights, which is economically uneconomical and complicated to manage. question

[0006] In addition, there is also the following problem: because it is necessary to make the straight line S formed on the surface of the semiconductor wafer W and its corresponding part formed on the photomask to carry out precise positional alignment for exposure, and to remove the exposure due to exposure. And the removal device of the deteriorated tape member, so it leads to an increase in equipment investment

[0009] However, when using this method, it is difficult to make the thickness of the covered photoresist film uniform, and the photoresist film cannot be formed very thickly, so the photoresist film may be damaged during etching. etched, resulting in the problem that the photoresist film has been removed before dicing

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