Light shield for contacting window making process and making process thereof

Abstract

The invention is a k-portion fractal masking method for preparing material chip, according to maximum level number k of the elements in the material chip to be made, firstly separating the basic mask into k centrally symmetrical areas, namely k-portion fractal, one of the areas is set in a through state, rotating all the masks obtained at an angle of 360 degrees / k in the same direction, per rotation sputters a level of the first element, after the first period, there are k material units on the chip, after this, if a element is added every time, adopting a new mask, making the fractal on the masking areas corresponding to current material units on the chip according to the fractal mode of the basic mask, so as to obtain the next new mask, i.e. each mask has the structure similar to the basic mask, and then obtaining the material chip combined of any n elements whose maximum level number is k by n fractals and k rotation operations superposed.

Description

technical field [0001] The present invention relates to a photomask and its application, and in particular to a photomask applied in contact window process and its contact window process. Background technique [0002] In the manufacturing process of liquid crystal displays, non-photosensitive dielectric materials or organic photosensitive materials are usually used as the insulating layer of the thin film transistor array. In order to electrically connect the conductive layers above and below the insulating layer, patterns are generally used. A contact window opening is formed in the insulating layer by a chemical process (such as a lithography process and an etching process or simply using a lithography process), so that the conductive layer above and below the insulating layer can be conducted. For example, the method for electrically connecting the pixel electrode in the pixel structure to the drain of the thin film transistor is to perform a patterning process before for...

AI Technical Summary

Problems solved by technology

However, due to the large thickness of the organic photosensitive material layer 104, the sidewalls of the contact opening 106 defined are too steep. In other words, the contact angle 108 between the sidewalls of the contact opening 106 and the underlying conductive layer 104 will be close to 70 degrees

[0005] Please refer to Figure 1B If the sidewall of the contact window opening 106 is too steep, it will cause poor step coverage of the pixel electrode 110 when the pixel electrode 110 is subsequently sputtered on the organic photosensitive material layer 104 and in the contact window opening 106, resulting in disconnection.

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