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P type material and mikture used for electronic device

A technology for electronic devices and mixtures, applied in the field of p-type dihydrophenazine and mixtures for electronic devices, which can solve problems such as difficult manufacturing, harsh manufacturing process, and expensive large-area displays

Active Publication Date: 2004-09-29
GLOBAL OLED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Devices made of inorganic materials are often brittle and require demanding fabrication processes, making them difficult and expensive to fabricate large-area displays

Method used

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  • P type material and mikture used for electronic device
  • P type material and mikture used for electronic device
  • P type material and mikture used for electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0188] Embodiment 1 (conventional OLED-comparative example)

[0189] Conventional non-stacked OLEDs are fabricated as follows. The -1.1 mm thick glass substrate coated with a transparent ITO conductive layer was cleaned and dried using a commercial glass washer. The thickness of ITO is about 42 nm, and the surface resistance of ITO is about 68 ohms / square. The ITO surface was subsequently treated with oxidative plasma to condition the surface, which was used as an anode. By decomposing CHF in an RF plasma processing chamber 3 Gas deposited a layer of CFx as HIL on the clean ITO surface with a thickness of 1 nm. The substrate is then transferred to a vacuum deposition chamber for deposition of all other layers on top of the substrate. by about 10 -6 Sublimated from a heated boat under Torr's vacuum, the following layers were deposited in the following order:

[0190] (1) HTL, 75nm thick, composed of NPB;

[0191] (2) ETL (also used as emission layer), 60nm thick, compos...

Embodiment 3

[0210] Embodiment 3 (the present invention)

[0211] A laminated OLED was prepared as in Example 2, except that NPB was replaced with compound (VI).

[0212] The stacked device structure is expressed as ITO / CFx / EL1 / Alq:Li(30nm) / (compound VI):F 4 -TCNQ(60nm) / EL2 / Mg:Ag.

[0213] The stacked OLED needs a driving voltage of 13.5V to pass 20mA / cm 2 . Its brightness is 1611cd / m 2 , and its luminous efficiency is about 8.1cd / A. Compared with Example 2, the efficiency is higher and the voltage is lower. The relationship between luminescence decay and runtime is expressed in image 3 middle. After 300 hours of operation, the brightness decreased by about 10%. The voltage change vs. run time is expressed in the Figure 4 middle. The voltage only increases by about 1.3%.

Embodiment 4

[0214] Embodiment 4 (the present invention)

[0215] A laminated OLED was prepared as in Example 2, but NPB was replaced with compound (VII).

[0216] The stacked device structure is expressed as ITO / CFx / EL1 / Alq:Li(30nm) / (compound VII):F 4 -TCNQ(60nm) / EL2 / Mg:Ag.

[0217] The stacked OLED needs a driving voltage of 13.2V to pass 20mA / cm2 . Its brightness is 1619cd / m 2 , and its luminous efficiency is about 8.1cd / A. Compared with Example 2, the efficiency is higher and the voltage is lower. The relationship between luminescence decay and runtime is expressed in image 3 middle. After 300 hours of operation, the brightness decreased by about 12%. The voltage change vs. run time is expressed in the Figure 4 middle. Voltage does not rise.

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Abstract

A p-type mixture for use in an electronic device including a host including a dihydrophenazine compound, and a dopant provided in the host.

Description

technical field [0001] The present invention relates to p-type dihydrophenazines and mixtures for use in electronic devices. Background technique [0002] P-type and n-type conductivity refer to the conductivity properties of semiconductor materials. The p-type semiconductor material is a positive charge carrier (hole transport), and the n-type semiconductor material is a negative charge carrier (electron transport). A key element in semiconductor devices is the p-n junction. A p-n junction is formed when two regions of opposite conductivity types are brought close to each other. The p-n junction has been widely used in many applications, such as semiconductors, power semiconductors, field-effect transistors (FETs), organic light-emitting diodes (OLEDs), and photovoltaic cells. [0003] The effectiveness of conductive organic materials is largely related to the combination of desirable electronic properties (eg, low resistivity), chemical stability, and physicochemical pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D241/38C09K11/06H05B33/12H10K99/00
CPCH01L51/0069H01L51/0058H01L51/0059H01L51/0071H01L51/0067H01L51/0061Y10S428/917H01L51/006H01L51/5052H01L51/5278H01L51/0081H01L51/0051H10K85/611H10K85/656H10K85/636H10K85/626H10K85/633H10K85/631H10K85/324H10K85/654H10K85/657H10K50/165H10K50/19C09K11/06
Inventor K·P·克鲁贝克L·-S·廖J·R·瓦加斯C·W·唐
Owner GLOBAL OLED TECH