Production method for anneal wafer and anneal wafer
A manufacturing method and wafer technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve the problems of longer annealing time, deterioration of productivity, and delay of time, so as to suppress the generation of sliding dislocations Effect
Inactive Publication Date: 2004-11-17
SHIN-ETSU HANDOTAI CO LTD
View PDF0 Cites 9 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, by optimizing the heating rate, making the heating rate slower is essentially equal to the longer annealing time at high temperature, which is not a fundamental slip dislocation control strategy.
Furthermore, due to the delay of the time spent in the annealing process, the result will be a deterioration in productivity
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0021] Embodiments of the present invention will be described below, but the present invention is not limited thereto.
[0022] It is known that in the high-temperature annealing of high-temperature (1100 to 1350°C) heat treatment using argon or hydrogen gas, etc., when a large-diameter wafer with a diameter of not less than 200mm or 300mm is heat-treated, slip dislocations penetrating from the back of the wafer to the surface are noticeable generated problems.
[0023] Therefore, the inventors of the present invention, because the sliding dislocation produced by this annealed wafer is produced from the contact portion of the wafer and the support mechanism of the wafer, so when the single crystal silicon wafer is carried out at high temperature annealing, if the silicon wafer and the support mechanism can If the generation of slip dislocation is effectively controlled on the contact portion of the wafer, it is speculated that the slip dislocation generated in the wafer can be...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| diameter | aaaaa | aaaaa |
Login to View More
Abstract
A production method for an anneal wafer comprising the step of subjecting a silicon single-crystal wafer fabricated by a Czochralski (CZ) method to a high-temperature annealing under an atmosphere of argon gas, hydrogen gas or a mixture of these gases at 1100-1350[deg.]C for 10-600 min, characterized in that, during the annealing, the silicon single-crystal wafer is supported by a support jig only in a region at least 5 mm away from the outer peripheral edge of the wafer toward the center of the wafer, and pre-annealing is performed, before the high-temperature annealing, at temperatures lower than the high-temperature annealing temperature to grow oxygen deposits. Accordingly, it is possible to provide a production method for an anneal wafer and an anneal wafer capable of restricting slip dislocation occurring at the high-temperature annealing even if a silicon single-crystal wafer having a diameter as large as at least 300 mm is used.
Description
technical field [0001] The invention relates to a manufacturing method of an annealed wafer and an annealed wafer, in particular to a manufacturing method of an annealed wafer and an annealed wafer which can reduce the occurrence of sliding dislocations even for large-diameter wafers. Background technique [0002] In recent years, the high integration and miniaturization of the device process has been promoted. For silicon wafers, it is sought to improve the integrity of the active region of the device on the surface and internal microdefects (BMD) composed of oxygen precipitates in the internal (bulk) The adsorption capacity of impurities such as metals caused by the increase, etc. [0003] Various methods have been tried for the above requirements. For example, in order to eliminate defects on the wafer surface (mainly growth (Grown in) defects), for the wafer obtained by the Czochralski method (CZ method), in argon, hydrogen or a mixed gas environment of the above gases ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00H01L21/322H01L21/324
CPCC30B29/06H01L21/3225H01L21/324C30B33/00
Inventor 小林德弘玉塚正郎名古屋孝俊曲伟峰
Owner SHIN-ETSU HANDOTAI CO LTD