Integrated memory having a voltage generator circuit for generating a voltage supply for a read/write amplifier

Abstract

An integrated memory contains a memory cell array, which has word lines and bit lines, and a read / write amplifier, which is connected to the bit lines for the assessing and amplifying data signals. A voltage generator circuit generates a voltage supply for application to the read / write amplifier. A potential difference is applied to the read / write amplifier using different supply potentials. The voltage generator circuit increases the potential difference applied to the read / write amplifier for a limited period of time during an assessment and amplification operation of the read / write amplifier. Charge-dependent control is implemented in the voltage generator circuit. An assessment and amplification operation can be carried out at a comparatively high switching speed and a low power consumption is possible.

Description

technical field [0001] The present invention relates to an integrated memory with an array of memory cells, which has word lines for selecting memory cells and bit lines for reading or writing data signals, and also has read and write amplifiers connected to the bit lines to perform The purpose of accessing and amplifying data signals. A voltage generator circuit is further provided to generate a supply voltage applied to the read-write amplifier. Background technique [0002] An integrated memory, such as in the form of a DRAM, generally has an array of memory cells including word lines and bit lines. In this case, the memory cell is arranged at the intersection of the bit line and the word line. The memory cell is fabricated in particular from a storage capacitor and a selection transistor connecting the individual storage capacitor to one of the bit lines, the control terminal of which is individually connected to one of the word lines for selecting the memory cell the...

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Problems solved by technology

However, especially with regard to the supply voltage of the read-write amplifiers of integrated memories, it is also true that a smaller supply voltage for reduced power consumption also produces a reduction in the switching speed of the associated read-write amplifiers if the read-write amplifiers used for access and amplification operations Amplifiers are activated using this lower supply voltage

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