Unlock instant, AI-driven research and patent intelligence for your innovation.

Optical element and method for its manufacture as well as lightography apparatus and method for manufacturing a semiconductor device

An optical element and optical technology, applied in semiconductor/solid-state device manufacturing, optical elements, microlithography exposure equipment, etc., can solve problems such as inconspicuous inhibition, and achieve the effect of improving productivity and prolonging service life

Inactive Publication Date: 2005-01-12
卡尔赛斯半导体制造技术股份公司
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contamination other than mirror oxidation is only insignificantly suppressed, or not suppressed at all

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical element and method for its manufacture as well as lightography apparatus and method for manufacturing a semiconductor device
  • Optical element and method for its manufacture as well as lightography apparatus and method for manufacturing a semiconductor device
  • Optical element and method for its manufacture as well as lightography apparatus and method for manufacturing a semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0074] figure 1 An optical component is shown which comprises a substrate 1 , a buffer zone 2 and a resonant region 10 , wherein the buffer region 2 and the resonant region 10 with layers 11 a - 11 n form a multilayer system 3 . Electromagnetic radiation 101 is directed onto free interface 100 .

[0075] For example, Zerodur  (Schott), Clearcreram  (Ohara), fused silica, silicon, and ULE  (Corning) can be used as the substrate material. It is not always possible to polish the substrate 1 to the required micro-roughness of 0.1 nm. A so-called buffer zone 2 is therefore used as an additional substrate leveling and substrate preparation before the actual coating, ie before the coating of the layers 11 a - n of the resonant region 10 . The buffer zone 2 can also be designed as a separate layer in order to be able to use the substrate and thus to contain chromium or scandium.

[0076] For example, silicon or a bilayer comprising Mo / Si may be other materials for the buffer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

In order to reduce contamination of optical elements which comprise a multilayer system on a substrate, it is proposed that the layer material and / or the layer thickness of at least one layer of the multilayer system are / is selected such that the standing wave which forms during reflection of the irradiated operating wavelength, forms a node of the electrical field intensity (node condition) in the area of the free interface of the multilayer system. Furthermore, a method for determining a design of a multilayer system, as well as a manufacturing process and a lithography apparatus are described.

Description

technical field [0001] The present invention relates to an optical element, more precisely a plane mirror or mask comprising a substrate and a reflectivity of which is maximized for a defined "operating wavelength", in particular for wavelengths in the EUV wavelength range optical multilayer system. The invention also relates to methods for producing such optical elements and methods for defining multilayer designs as well as lithographic apparatus and methods for manufacturing semiconductor devices. Background technique [0002] The term "operating wavelength" of an optical element refers to the wavelength at which the reflectivity of the multilayer system is at its maximum. [0003] In EUV lithography of semiconductor devices, it is particularly required to employ optical components comprising a substrate and a multilayer system, such as a photomask or a mirror for the extreme ultraviolet (EUV) wavelength range between 11-16nm, the multilayer The system is optimized for ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/08G03F1/16G03F7/20G21K1/06G21K5/02H01L21/027
CPCY10T428/2495G02B5/08Y10T428/24942G21K2201/067G02B5/0816G21K1/062B82Y10/00G03F7/70958G03F7/70916
Inventor 安德烈·E·雅克辛埃里克·路易斯弗雷德里克·比约克马可·维多斯克罗曼·克莱因弗兰克·斯戴特兹
Owner 卡尔赛斯半导体制造技术股份公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com