Cleansing agent for chemical absorbing hydrid gas and method for cleansing noxious gas

A chemical adsorption and harmful gas technology, applied in chemical instruments and methods, separation methods, other chemical processes, etc., can solve the problems of increasing production costs and waste disposal costs

Inactive Publication Date: 2005-01-19
IND TECH RES INST
View PDF2 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chemisorbents have a significantly improved adsorption capacity, but due to the need to add accelerators such as noble metals (AgO) or highly polluting heavy metals (HgO, CdO), it is bound to increase the production cost and future waste treatment costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Repeat the step of comparative example 1 to prepare cleaning agent, but with 18.55g Cu(NO 3 ) 2 .2.5H 2 O dissolved in 565ml of distilled water, 11.15g of Zn(NO 3 ) 2 .6H 2 O dissolved in 266ml of distilled water, 103.65 grams of Al(NO 3 ) 3 .9H 2 O was dissolved in 268 ml of distilled water as a starting solution, and 11.75 g of high surface area (161 m 2 / g) of mesoporous titanium dioxide (primary particle size 5-10nm) was placed in the sedimentation tank. The mesoporous titanium dioxide is self-prepared by a sol-gel method (Sol-gel). The weight composition ratio of the adsorbent synthesized in this example is CuO: ZnO: Al 2 o 3 :TiO 2 =13.5:6.5:30:50. The prepared detergent has a specific surface area of ​​75.6m3 analyzed by BET method. 2 / g, the detergent adsorption capacity test was carried out under the same test conditions as in Comparative Example 1, and the test results are shown in Table 1.

Embodiment 2

[0023] Repeat the steps of Example 1 to prepare cleaning agent, but the synthetic adsorbent weight composition ratio is CuO: ZnO: Al 2 o 3 :TiO 2 =21.6:10.4:48:20. The prepared detergent has a specific surface area of ​​120m through BET analysis. 2 / g. The detergent adsorption capacity test was carried out under the same test conditions as Comparative Example 1, and the test results are shown in Table 1.

[0024] Active ingredients (CuO+ZnO)

[0025]The results in Table 1 show that the cleaning agent of Example 1 of the present invention with titanium dioxide having a high specific surface area has an adsorption capacity more than twice that of the known cleaning agent containing the same percentage of active ingredients. The cleaning agent of Example 2 of the present invention also has an adsorption capacity similar to that of the cleaning agent of Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
specific surface areaaaaaaaaaaa
specific surface areaaaaaaaaaaa
specific surface areaaaaaaaaaaa
Login to view more

Abstract

The invention relates to a cleaning agent for chemical adsorption of hydride gas, specially a cleaning agent with titanium dioxide as carrier. The cleaning agent is made by coprecipitation process and BET specific surface area is no less than 60m#+[2] / g. The cleaning agent can remove harmful hydride component from the semiconductor factory and the photoelectricity factory by chemical adsorption.

Description

technical field [0001] The present invention relates to a cleaning agent for chemically adsorbing hydride gas, in particular to a cleaning agent for chemically adsorbing hydride gas with titanium dioxide as a carrier. The cleaning agent is suitable for removing toxic hydride gases in the process waste gas of semiconductor factories and photovoltaic power plants. Background technique [0002] Hydrides (such as AsH 3 、PH 3 、SiH 4 、GeH 4 ) is a gas used in large quantities in semiconductor factory furnace tubes, ion implantation processes, and MOCVD processes in photoelectric plants. These gases are not fully utilized in the process, so toxic gases will be discharged from the process machines. These toxic process exhaust gases need to be treated, otherwise they will be a safety threat inside the factory and a source of air pollution outside the factory. General process tail gas treatment can be divided into three categories: wet method, high tem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/04B01J20/08
Inventor 许荣男李寿南李秋煌黄建良姚品全
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap