The invention discloses a polyvinyl alcohol cinnamate type KPR photoresist etching residue stripping agent composition, which comprises 40-70% of an organic solvent, 1-20% of organic amine, 0.5-10% of a corrosion inhibitor, 0.2-5% of a surfactant, 1-5% of fluoride and the balance of ultrapure water, the surfactant is one or a mixture of more of ethylene glycol, glycerol, glucose, sorbitol, pentaerythritol, xylitol and AEO-7; the organic amine is one or a mixture of more of monoethanolamine, triethanolamine and isopropanolamine; the corrosion inhibitor is one or a mixture of more of phenols, carboxylic acids and benzotriazoles. The stripping agent has higher cleaning efficiency, the cleaning time is remarkably shortened compared with that of similar products, the cleaning effect and the protection effect on a wafer base material are better, and the operation cost of a semiconductor factory can be remarkably reduced.