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Polyvinyl alcohol cinnamate type KPR photoresist etching residue stripping agent composition

A polyvinyl alcohol cinnamate and photoresist technology, which is applied in the processing of photosensitive materials and other directions, can solve the problem of high occupancy rate of cleaning equipment, and achieve the effect of good protection effect, shortening cleaning time and reducing operating costs.

Pending Publication Date: 2022-04-12
深圳迪道微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And longer cleaning time will make the occupancy rate of cleaning equipment remain high, thus prompting semiconductor factories to purchase more equipment and occupy more clean rooms to meet the growing cleaning demand

Method used

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  • Polyvinyl alcohol cinnamate type KPR photoresist etching residue stripping agent composition
  • Polyvinyl alcohol cinnamate type KPR photoresist etching residue stripping agent composition
  • Polyvinyl alcohol cinnamate type KPR photoresist etching residue stripping agent composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~39

[0030] The KPR photoresist etching residue stripping agents described in Examples 1 to 39 of the present invention are mixed and prepared according to the components and ratios shown in Tables 1 and 2. Wherein embodiment 1~10 tests the influence of different surfactants on cleaning effect; Embodiment 11~21 tests the impact of different corrosion inhibitor combinations on cleaning effect and test piece corrosion situation; Influence of photoresist residue cleaning effect.

[0031] Table 1 is the component material of the stripping agent of described embodiment 1~33

[0032]

[0033]

[0034] Table 2 Mass percentage content and cleaning time of each component in Examples 1-33.

[0035]

[0036]

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PUM

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Abstract

The invention discloses a polyvinyl alcohol cinnamate type KPR photoresist etching residue stripping agent composition, which comprises 40-70% of an organic solvent, 1-20% of organic amine, 0.5-10% of a corrosion inhibitor, 0.2-5% of a surfactant, 1-5% of fluoride and the balance of ultrapure water, the surfactant is one or a mixture of more of ethylene glycol, glycerol, glucose, sorbitol, pentaerythritol, xylitol and AEO-7; the organic amine is one or a mixture of more of monoethanolamine, triethanolamine and isopropanolamine; the corrosion inhibitor is one or a mixture of more of phenols, carboxylic acids and benzotriazoles. The stripping agent has higher cleaning efficiency, the cleaning time is remarkably shortened compared with that of similar products, the cleaning effect and the protection effect on a wafer base material are better, and the operation cost of a semiconductor factory can be remarkably reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoresist strippers, in particular to a fluorine-containing fast stripper used for removing KPR type photoresist etching residues. Background technique [0002] In the production process of semiconductor chips, it is necessary to use photolithography and etching to transfer the designed graphics from the mask to the wafer, so as to finally produce ultra-highly integrated chips. The specific process is to deposit thin films (including silicon dioxide, silicon nitride, polysilicon, silicon carbide, gallium nitride, titanium, titanium nitride, cobalt, tungsten, copper, aluminum, nickel, etc.) Resist coating, exposure, development, ion implantation or etching, ashing, cleaning. Among them, during the ion implantation or etching process, the photoresist will become hardened due to ion bombardment and difficult to remove, and the etching process will leave a large amount of polymer by-products ...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 王勇军康威
Owner 深圳迪道微电子科技有限公司
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