Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

39 results about "Semiconductor fab" patented technology

This is a list of semiconductor fabrication plants: A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are made.They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design only firms (fabless companies), or by Pure Play foundries, who manufacture designs from ...

Imaging for a machine-vision system

Manufacturing lines include inspection systems for monitoring the quality of parts produced. Manufacturing lines for making semiconductor devices generally inspect each fabricated part. The information obtained is used to fix manufacturing problems in the semiconductor fab plant. A machine-vision system for inspecting devices includes a light source for propagating light to the device and an image detector that receives light from the device. Also included is a light sensor assembly for receiving a portion of the light from the light source. The light sensor assembly produces an output signal responsive to the intensity of the light received at the light sensor assembly. A controller controls the amount of light received by the image detector to a desired intensity range in response to the output from the light sensor. The image detector may include an array of imaging pixels. The imaging system may also include a memory device which stores correction values for at least one of the pixels in the array of imaging pixels. To minimize or control thermal drift of signals output from an array of imaging pixels, the machine-vision system may also include a cooling element attached to the imaging device. The light source for propagating light to the device may be strobed. The image detector that receives light from the device remains in a fixed position with respect to the strobed light source. A translation element moves the strobed light source and image detector with respect to the device. The strobed light may be alternated between a first and second level.
Owner:ISMECA SEMICONDUCTOR HOLDING SA

Address-transparent device and method

An address-transparent device is disclosed that couples between two network interfaces in a semiconductor fab for communicating packets between a host coupled to a first network interface and a tool coupled to a second network interface. Alternatively, the address-transparent device couples between two networks in a semiconductor fab for communicating packets between a host on a first network and a tool on a second network. In a first aspect of the invention, the address-transparent device routes packets between the first network and the second network that is independent of any protocol. The address-transparent device couples to the host through the first network and couples to the tool through the second network where the address-transparent device having a first port with no IP address and a second port with a subnet IP address. In a second aspect of the invention, the address-transparent device intercepts packets for local use by a data consumer that resides within or outside of the address-transparent device. The address-transparent device can intercept all or a portion of data streams, while forwards other portions of data streams to a destination. The header of the original packet is stored for subsequent use for sending a reply to an intercepted packet. In a third aspect of the invention, the address-transparent device reroutes packet to another destination by changing the header of the received packet. The header of the original packet is modified, replacing the original header information with the header information of the destination device. The header of the original packet is stored for subsequent use for sending a reply to a rerouted packet.
Owner:MKS INSTR INC

Measurement device and measurement method for stray inductance in IGBT module

PendingCN107102211AEasy to buildAccurate Parasitic InductanceResistance/reactance/impedenceStray inductanceDc capacitor
The invention relates to a measurement device for stray inductance in an IGBT module. The measurement device is characterized in that the measurement device comprises a power supply device, a to-be-measured IGBT module, a current probe, a voltage probe, an oscilloscope, a pulse triggering device, controllable switches S1, S2, S3, a DC capacitor C1, a DC discharging resistor R1, a load inductor L1 and a freewheeling diode D1; the controllable switch S2 is serially connected with the DC discharging resistor R1 and is parallelly connected with the DC capacitor C1; the freewheeling diode D1, the controllable switch S3 and the to-be-measured IGBT module are serially connected; the pulse triggering device is connected with the controllable switch S3; and the load inductor L1 is parallelly connected with two sides of the freewheeling diode D1. The measurement device can effectively evaluate induction voltage of an inner packaging parasitic parameter when the IGBT module is in a switching-off transient state. The packaged stray inductance which is calculated according to the voltage and current over two ends of a parasitic inductor is more practical and can be used for evaluating an IGBT safety margin, and furthermore can be used for verifying IGBT module designing. The measurement device and the measurement method have a certain meaning to semiconductor manufacturers and IGBT application parties.
Owner:CHINA UNIV OF MINING & TECH

Method for controlling doping density of doped region of semiconductor device accurately

The invention provides a method for controlling the doping density of a doped region of a semiconductor device accurately. In the method, a silicon wafer is oxidized; a photoresist is added to a boron emulsion source in the coating process; and the boron emulsion source is mixed with the photoresist, and the mixture is placed in a stirring vessel for sufficient stirring so as to obtain an emulsion source coating liquid, wherein the photoresist is carbonized at a high temperature to so as to remove gases carried in the diffusion process, thus obtaining the required impurity density distribution in a boron region. The method is easy and convenient to operate, simple in equipment and is suitable for massive production. The diffusion parameters of the method can be controlled and adjusted freely; the doping density is adjustable; a silica oxidation layer is formed on the silicon wafer by diffusible oxidation; the thickness accuracy in oxidization is controlled so as to reach the density for controlling diffusion impurities accurately; the technological process is simplified; the production cost is reduced; and the yield of the semiconductors is improved by over 20%. The method is particularly suitable for low and medium-grade semiconductor manufacturers to produce the semiconductors massively; and the method has the advantage of remarkable economic benefit.
Owner:JILIN SINO MICROELECTRONICS CO LTD

System and method for qualifying a logic cell library

A system and a method for qualifying a logic cell library storing process parameters and properties of a specific semiconductor FAB when the logic cell library is newly developed or modified is provided. The system for qualifying a logic cell library which qualifies a new library and a modified library, includes a format transformer for transforming formats of the new library and the modified library into formats suitable for a predetermined qualifier, a sample generator for creating a qualification cell sample capable of qualifying all cells by using cells of the new or modified library having a transformed format, a cell matching tool for performing a one-to-one cell comparison between cells of the new library and cells of an existing library, a function qualifier for determining whether or not a right value is output with respect to an input value in order to qualify a cell function of the new or modified library, a processing rate qualifier for measuring a time required from signal input to signal output in order to qualify a cell processing rate of the new or modified library, a power consumption qualifier for measuring power consumed during a process of a cell of the new or modified library, and an inter-qualifier for determining whether or not logical design information and physical design information of the new or modified library suitably corresponds to each other.
Owner:DONGBU ELECTRONICS CO LTD

Composite slurry for doping in semiconductor industry and curing film-forming processing method

The invention discloses composite slurry for doping in the semiconductor industry and a curing film-forming processing method. The invention belongs to the field of high polymer materials, and particularly relates to composite slurry for doping in the semiconductor industry and a subsequent curing molding manufacturing method. According to the curing film-forming processing method of composite slurry for doping in the semiconductor industry, the composite slurry for doping is used for processing the composite slurry for doping by adopting wet papermaking equipment, and the composite slurry ischaracterized in that the composite slurry for doping is washed by deionized water or ultrapure water before being put into the wet papermaking equipment. The composite slurry and the forming film thereof are moderate in hardness, moderate in strength and uniform and consistent in doping, and the strict index requirement that the product yield is larger than 99.999% is met when parallel contrast tests are conducted on famous semiconductor manufacturers and imported products in China. The composite slurry has positive significance for realizing import substitution of the product and getting ridof dependence on foreign imported products.
Owner:崔恩密 +1

Scrubbing tower used for acidic and alkaline exhaust gas of semiconductor plants

InactiveCN103084051AExcellent acid and alkali exhaust treatment effectAffect the washing effectDispersed particle separationFilling materialsSemiconductor fab
The invention discloses a scrubbing tower used for acidic and alkaline exhaust gas of semiconductor plants. The scrubbing tower comprises a circulation detergent box. A porous separation plate is arranged at the middle of the circulation detergent box. The part of the circulation detergent box below the separation plate is used for collecting a detergent. A filling material used for increasing the contact area between the acidic and alkaline exhaust gas and the detergent is arranged on the separation plate. The scrubbing tower also comprises a circulation pump and a circulation pipeline. The circulation pump is connected with the circulation detergent box through the circulation pipeline, and is used for driving the circulation flow of the detergent. The scrubbing tower also comprises a liquidometer which is arranged on the lower part of the circulation detergent box and is connected with the circulation detergent box through a connection device. A filtering device is arranged on the connection device. With the scrubbing tower provided by the invention, impurities and scraps of filling materials can be effectively prevented from entering the liquidometer and damaging the liquidometer; and scrubbing tower scrubbing effect is prevented from being affected by excessively low liquid level in the scrubbing tower. The scrubbing tower has a simple structure, and provides an excellent processing effect upon semiconductor plant acidic and alkaline exhaust gases.
Owner:CSMC TECH FAB2 CO LTD

Battery cell consistency sorting method applied to energy storage lithium batteries of semi-conductor factories

The invention relates to a battery cell consistency sorting method applied to energy storage lithium batteries of semiconductor factories. The method comprises the following steps that charging capacity, discharging capacity, internal resistance, constant-current charging ratio and multiplying power screening is carried out, the batteries in the same batch are discharged and then charged, and the batteries of which the difference value between the charging capacity and rated capacity meets the requirement are screened out; the screened batteries are discharged and then charged, and the batteries of which the difference value between the discharge capacity and the rated capacity and the discharge capacity meet the requirements are screened out; and the screened batteries are charged, the batteries with the internal resistance difference less than or equal to 0.2 milliohm are screened out, and the ratio of the constant-current charging capacity to the charging capacity is greater than or equal to 98%. The screened batteries are charged and then discharged, and the batteries with the voltage drop larger than or equal to 2.85 V and the ratio of the discharging capacity to the rated capacity larger than or equal to 90% are screened out. The method has the advantages that the screened lithium ion batteries can keep good battery consistency in the aspects of charging capacity, rate discharge and the like, and in addition, the lithium ion batteries screened by the screening standards related to charging capacity, rate discharge and the like are more suitable for the semiconductor factories.
Owner:芜湖楚睿智能科技有限公司

System and method for qualifying a logic cell library

A system and a method for qualifying a logic cell library storing process parameters and properties of a specific semiconductor FAB when the logic cell library is newly developed or modified is provided. The system for qualifying a logic cell library which qualifies a new library and a modified library, includes a format transformer for transforming formats of the new library and the modified library into formats suitable for a predetermined qualifier, a sample generator for creating a qualification cell sample capable of qualifying all cells by using cells of the new or modified library having a transformed format, a cell matching tool for performing a one-to-one cell comparison between cells of the new library and cells of an existing library, a function qualifier for determining whether or not a right value is output with respect to an input value in order to qualify a cell function of the new or modified library, a processing rate qualifier for measuring a time required from signal input to signal output in order to qualify a cell processing rate of the new or modified library, a power consumption qualifier for measuring power consumed during a process of a cell of the new or modified library, and an inter-qualifier for determining whether or not logical design information and physical design information of the new or modified library suitably corresponds to each other.
Owner:DONGBU ELECTRONICS CO LTD

Method for controlling doping density of doped region of semiconductor device accurately

The invention provides a method for controlling the doping density of a doped region of a semiconductor device accurately. In the method, a silicon wafer is oxidized; a photoresist is added to a boron emulsion source in the coating process; and the boron emulsion source is mixed with the photoresist, and the mixture is placed in a stirring vessel for sufficient stirring so as to obtain an emulsion source coating liquid, wherein the photoresist is carbonized at a high temperature to so as to remove gases carried in the diffusion process, thus obtaining the required impurity density distribution in a boron region. The method is easy and convenient to operate, simple in equipment and is suitable for massive production. The diffusion parameters of the method can be controlled and adjusted freely; the doping density is adjustable; a silica oxidation layer is formed on the silicon wafer by diffusible oxidation; the thickness accuracy in oxidization is controlled so as to reach the density for controlling diffusion impurities accurately; the technological process is simplified; the production cost is reduced; and the yield of the semiconductors is improved by over 20%. The method is particularly suitable for low and medium-grade semiconductor manufacturers to produce the semiconductors massively; and the method has the advantage of remarkable economic benefit.
Owner:JILIN SINO MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products