Method for controlling doping density of doped region of semiconductor device accurately

A technology of doping concentration and precise control, applied in the field of microelectronics, can solve problems such as high cost and poor doping accuracy, and achieve the effects of improved yield, simple equipment and significant economic benefits.

Active Publication Date: 2013-06-19
JILIN SINO MICROELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

To solve technical problems such as poor doping accuracy and high cost in the existing technology

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] In the first step, first oxidize the silicon wafer that needs to be doped with impurities, the oxidation temperature is controlled at 500°C, and the oxidation thickness is 100 angstroms; in the second step, the latex source coating solution (the latex The source is phosphorus-containing silica latex source), and the thickness of the coating layer is 2500 angstroms; the third step is to bake the coated silicon wafer under an infrared lamp at 130° for 15 minutes, so that the organic solvent in the collagen can play a role. ; The fourth step is to put the silicon wafer on the quartz glass plate, send it into the diffusion furnace, and diffuse it at a high temperature of 1150° for 2.5 hours; , such a semiconductor device with precisely controlled doping concentration in the doped region is completed.

Embodiment 2

[0013] In the first step, first oxidize the silicon wafer that needs to be doped with impurities, the oxidation temperature is controlled at 800°C, and the oxidation thickness is 150 angstroms; in the second step, the latex source coating solution (the latex The source is phosphorus-containing silica latex source), and the thickness of the coating layer is 2650 angstroms; the third step is to bake the coated silicon wafer under an infrared lamp at 150° for 18 minutes to make the organic solvent in the collagen play a role. ; The fourth step is to put the silicon wafer on the quartz glass plate, send it into the diffusion furnace, and diffuse it at a high temperature of 1200° for 4 hours; , such a semiconductor device with precisely controlled doping concentration in the doped region is completed.

Embodiment 3

[0015] In the first step, first oxidize the silicon wafer that needs to be doped with impurities, the oxidation temperature is controlled at 1000°C, and the oxidation thickness is 200 angstroms; in the second step, the latex source coating solution (the latex The source is phosphorus-containing silica latex source), and the thickness of the coating layer is 2800 angstroms; the third step is to bake the coated silicon wafer under an infrared lamp at 180° for 20 minutes, so that the organic solvent in the collagen can play a role. ; The fourth step is to place the silicon wafer on the quartz glass plate and send it into the diffusion furnace for 4.5 hours of diffusion at a high temperature of 1250°; the fifth step is to put the diffused silicon wafer into the constant temperature zone to cool and introduce oxygen , such a semiconductor device with precisely controlled doping concentration in the doped region is completed.

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Abstract

The invention provides a method for controlling the doping density of a doped region of a semiconductor device accurately. In the method, a silicon wafer is oxidized; a photoresist is added to a boron emulsion source in the coating process; and the boron emulsion source is mixed with the photoresist, and the mixture is placed in a stirring vessel for sufficient stirring so as to obtain an emulsion source coating liquid, wherein the photoresist is carbonized at a high temperature to so as to remove gases carried in the diffusion process, thus obtaining the required impurity density distribution in a boron region. The method is easy and convenient to operate, simple in equipment and is suitable for massive production. The diffusion parameters of the method can be controlled and adjusted freely; the doping density is adjustable; a silica oxidation layer is formed on the silicon wafer by diffusible oxidation; the thickness accuracy in oxidization is controlled so as to reach the density for controlling diffusion impurities accurately; the technological process is simplified; the production cost is reduced; and the yield of the semiconductors is improved by over 20%. The method is particularly suitable for low and medium-grade semiconductor manufacturers to produce the semiconductors massively; and the method has the advantage of remarkable economic benefit.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for precisely controlling the doping concentration of a doping region of a semiconductor device. Background technique [0002] The precise distribution process of impurities in existing power devices is a key technology to determine the level and uniformity of a device's parameters. Basically, two methods are used for doping the doped region: boron or phosphorus plasma implantation method and the method of using latex source or gaseous source to diffuse at high temperature. The ion implantation method requires an ion implanter, which is relatively expensive, and the processing cost is very high, which is unaffordable for many manufacturers of low-grade semiconductor products. For doping impurities directly with latex source or gaseous source at high temperature, when high boron sheet resistance is required, the accuracy is very poor due to the high concentratio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/223
Inventor 王新
Owner JILIN SINO MICROELECTRONICS CO LTD
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