Amplification circuit

A technology for amplifying circuits and voltage sources, applied in amplifiers, logic circuits, single-ended push-pull amplifiers, etc., can solve problems such as insufficient dynamic range, reduce circuit scale, simplify circuit structure, and realize integration Effect

Inactive Publication Date: 2005-01-19
SONY CORP
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Therefore, due to DC offset due to manufacturing tolerances, the output cannot obtain a sufficient dynamic range, and there is a problem that it is not suitable for direct use as an analog signal processing circuit such as a high-gain amplifier or a buffer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amplification circuit
  • Amplification circuit
  • Amplification circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0051] figure 1 It is a diagram showing the operating principle of the DC offset detection circuit of the present invention. exist figure 1 Among them, 1 is a voltage source, 2 is a PMOS transistor (the third PMOS transistor), 3 is an NMOS transistor (the third NMOS transistor), 4 is a ground terminal, and 5 is inserted between the source of the NMOS transistor 3 and the ground terminal 4 to make the NMOS The source voltage of transistor 3 is raised to reduce the voltage source for DC offset, 6 is the input terminal and 7 is the output terminal. In addition, the back gate of the PMOS transistor 2 is connected to the source, and the back gate of the NMOS transistor 3 is connected to the ground terminal 4 . Furthermore, assuming that the voltage value of the voltage source 1 is Vdd, the drain current of the PMOS transistor is Ip, the drain current of the NMOS transistor is In, the current flowing to the output terminal 7 is Id, and the voltage value of the voltage source 5 (...

Embodiment approach 2

[0103] 6 is a circuit diagram showing the configuration of an amplifier circuit according to Embodiment 2 of the present invention. As mentioned above, when operating from a single power supply, image 3 The amplifying circuit shown can remove the DC offset when Vtp≥Vtn and Mp≤Mn. On the other hand, FIG. 6 shows that the amplifier circuit according to the second embodiment of the present invention can remove the DC offset when VtpMn, which is different from the amplifier circuit according to the first embodiment. In Figure 6, due to and image 3 The same symbols denote the same or corresponding parts, so descriptions thereof are omitted. 61 is a PMOS transistor (second PMOS transistor) inserted between the source of the PMOS transistor 11 and the voltage source 1 in order to reduce the source voltage of the PMOS transistor 11 to remove the DC offset, and 62 is formed and inserted in the same manner as the PMOS transistor 61. In the PMOS transistor (the 4th PMOS transistor) ...

Embodiment approach 3

[0116] The amplifier circuit according to Embodiment 3 of the present invention is for image 3 The first voltage bias means raises the source voltage of the NMOS transistor constituting the CMOS inverter circuit as shown, and the second voltage bias means reduces the source voltage of the PMOS transistor constituting the CMOS inverter circuit as shown in FIG. The shifting device is different from Embodiment 1 and Embodiment 2 in that two voltage shifting devices are combined with a simple configuration by providing a common part. Figure 9 It is a circuit diagram showing the configuration of an amplifier circuit according to Embodiment 3 of the present invention. exist Figure 9 in, due to image 3 The same reference numerals as in FIG. 6 denote the same or corresponding parts, and description thereof will be omitted.

[0117] Second, specify Figure 9 Operation of the amplifier circuit shown. In the case of Vtp≥Vtn and Mp≤Mn, the operational amplifier 9 functions, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An amplifier circuit including a CMOS inverter circuit that eliminates a DC offset caused by variations in characteristics of elements in each manufacturing process and is thus applicable to analog signal processing. The CMOS inverter circuit including a PMOS transistor (11), an NMOS transistor (12), and the like is provided with an NMOS transistor (13) connected to the NMOS transistor (12) to increase a source voltage of the NMOS transistor (12) and DC offset detecting means for detecting a DC offset and applying a voltage adjusted so as to reduce the DC offset to a gate of the NMOS transistor (13).

Description

technical field [0001] The present invention relates to amplifier circuits, and more particularly to a CMOS inverting circuit suitable for analog signal processing by removing DC offsets caused by discrete element characteristics generated in each manufacturing process of NMOS transistors and PMOS transistors constituting CMOS. Background technique [0002] In recent years, CMOS circuits have been used in large quantities in semiconductor devices provided in digital equipment in response to the increase in the scale of digital equipment manufacturing accompanying the advancement of digital signal processing technology. However, regarding high-frequency signals, image signals, and sound signals, it is sometimes easier to process them as analog signals, and in order to realize A / D conversion circuits, D / A conversion circuits, crystal oscillator circuits, etc., analog signals are also necessary. deal with. [0003] As an analog signal processing circuit, bipolar transistors ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/30
CPCH03F3/3022H03F1/301H03F3/30
Inventor 平林敦志小森健司
Owner SONY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products