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Method for forming polysilicon layer on base plate

A polysilicon layer and amorphous silicon layer technology, applied in optics, instruments, electrical components, etc., can solve the problem that the electron mobility of thin-film transistor arrays cannot be effectively improved, the polysilicon layer with larger silicon grain size cannot be formed, and the electron migration The rate cannot be improved, etc.

Inactive Publication Date: 2005-01-26
AU OPTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, according to the thin film transistor array fabricated from the polysilicon layer 150 having only silicon grains of smaller silicon grain size, the electron mobility cannot be improved.
[0007] To sum up, the existing methods for forming a polysilicon layer on a substrate can only form a polysilicon layer with a smaller silicon grain size, but cannot form a polysilicon layer with a larger silicon grain size
This will be enough to prevent the electron mobility of the thin film transistor array from being effectively improved

Method used

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  • Method for forming polysilicon layer on base plate
  • Method for forming polysilicon layer on base plate
  • Method for forming polysilicon layer on base plate

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Embodiment Construction

[0028] Please refer to Figure 2A-2E , which is a schematic diagram of a method for forming a polysilicon layer on a substrate according to a preferred embodiment of the present invention. The method for forming the polysilicon layer on the substrate will be described through the following steps.

[0029] Initially, at Figure 2A In the process, an inert gas such as argon (Ar) is first injected along the direction shown in the figure, so that the argon enters the substrate 210, so that the substrate 210 produces the following Figure 2B A plurality of pores 212 are shown in . Next, at Figure 2C In, using the same reactor, using the plasma enhanced chemical vapor deposition method, first depositing a buffer layer such as a silicon dioxide layer 220 on the substrate 210, and then depositing a layer of amorphous silicon layer 230 on the silicon dioxide layer 220 above. Among them, amorphous silicon is used as a precursor for forming polysilicon. Finally, in Figure 2D In ...

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Abstract

The invention is a method of forming polycrystalline silicon layer on a substrate, mainly including the following steps: firstly, injecting inert gases in the substrate to generate many apertures in the substrate, successively depositing a buffer layer on the substrate, then depositing a noncrystalline silicon layer on the buffer layer, and finally providing heat for the noncrystalline silicon layer to convert it to a polycrystalline silicon layer.

Description

technical field [0001] The present invention relates to a method for forming a polysilicon layer on a substrate, and more particularly to a method for forming a polysilicon layer with a larger silicon grain size on a substrate. Background technique [0002] A thin film transistor liquid crystal display (TFT-LCD) has a thin film transistor (TFT) array on a glass substrate, and the thin film transistor array is used to control the arrangement of liquid crystals in each pixel. Thin film transistors are made of amorphous silicon (amorphous silicon) or polycrystalline silicon (poly silicon). The important characteristic of polysilicon over amorphous silicon is that polysilicon has better electron mobility (mobility) than amorphous silicon. This superiority to amorphous silicon technology allows polysilicon technology to allow the integration of more electronic circuits, enabling Overall product complexity and weight are reduced. Therefore, polysilicon technology is bound to bec...

Claims

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Application Information

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IPC IPC(8): G02F1/136H01L21/20H01L21/324
Inventor 张茂益
Owner AU OPTRONICS CORP