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Method for manufacturing gate electrode for use in semiconductor device

A semiconductor and gate electrode technology, which is used in the field of manufacturing semiconductor devices and can solve problems such as the destruction of gate channels or cell junctions

Inactive Publication Date: 2005-02-09
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since the gate package nitride is immediately formed on the gate structure, the contaminated tungsten species remains on the wafer, which can cause damage to the gate channel or cell land during post-thermal processing. destroy

Method used

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  • Method for manufacturing gate electrode for use in semiconductor device
  • Method for manufacturing gate electrode for use in semiconductor device
  • Method for manufacturing gate electrode for use in semiconductor device

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Embodiment Construction

[0014] Figure 1A to Figure 1D A cross-sectional view is provided to illustrate a method of fabricating a tungsten-polymerized metal gate electrode for a semiconductor device in accordance with a preferred embodiment of the present invention.

[0015] refer to Figure 1A , the manufacturing method for a tungsten-polymerized metal gate electrode of the present invention begins with preparing a semiconductor substrate 110 obtained by a predetermined procedure. The isolation region 112 and the source / drain region 113 are formed at predetermined positions of the semiconductor substrate 110 using a typical method. After that, a gate oxide layer 114 and a polysilicon layer 116 are sequentially formed on the semiconductor substrate 110 .

[0016] Subsequently, a barrier layer 118 is formed on the polysilicon layer 116 to prevent internal diffusion between the polysilicon layer 116 and the tungsten layer 120, wherein the barrier layer 118 is made of such as tungsten nitride, titanium...

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Abstract

A method for manufacturing an enhanced tungsten gate electrode for use in a semiconductor device is disclosed to adopt a selective oxidation process in an inert gas or a nitrogen gas ambient. The method includes the steps of: preparing a semiconductor substrate obtained by a predetermined process; forming a gate oxide layer on the semiconductor substrate; forming a tungsten polymetal gate electrode including a polysilicon and a tungsten formed on the gate oxide layer in sequence; and carrying out a selective oxidation process in an ambient of a source gas containing hydrogen gas (H2) diluted with an inert gas or a nitrogen gas for forming a selective oxide on sidewalls of the polysilicon.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a tungsten-polymerized metal gate electrode of a semiconductor device to prevent the semiconductor device from being polluted by tungsten vapor by using enhanced selective oxidation treatment. Background technique [0002] Generally, doped polysilicon is commonly used for the gate electrode in the fabrication of metal oxide semiconductor (MOS) transistors since the procedure for fabricating the polysilicon gate electrode is relatively fixed. However, under highly integrated semiconductor devices, all the patterns in the device are increasingly miniaturized so that the line width in the device will become smaller than 100 nanometers or 80 nanometers. [0003] Accordingly, it is difficult to apply existing polysilicon gate electrodes to modern semiconductor devices requiring high speed and fast refresh time because doped polysil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28H10B12/00
CPCH01L27/10873H01L21/28061H10B12/05H01L21/18
Inventor 洪炳涉吴在根
Owner SK HYNIX INC