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Semiconductor device, and control method and device for driving unit component of semiconductor device

A technology of unit components, semiconductors, applied in the direction of radiation control devices, signal generators with a single pick-up device, electrical components, etc.

Inactive Publication Date: 2005-03-30
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0037] However, the pixel unit 3 of the 3TR structure without such selection transistors cannot adopt this technology

Method used

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  • Semiconductor device, and control method and device for driving unit component of semiconductor device
  • Semiconductor device, and control method and device for driving unit component of semiconductor device
  • Semiconductor device, and control method and device for driving unit component of semiconductor device

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Embodiment Construction

[0054] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, an embodiment of a device using a CMOS imaging sensor, which is an example of an X-Y address type solid-state imaging device, will be described. Also, all pixels of the CMOS imaging sensor are composed of NMOS. However, this is only an example. The device is not limited to a MOS type imaging device. All the embodiments described below apply to all physical quantity distribution sensing semiconductor devices in which a plurality of unit components are sensitive to externally input electromagnetic waves such as light and rays and are arranged in a row or in a matrix. Also, it should be noted that in the embodiment according to the present invention, the words "row" and "column" used for the pixel arrangement and the direction of the line represent the horizontal direction and the vertical direction of the matrix, respectively. However,...

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Abstract

A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to 1 / 2 , and preferably less than or equal to 1 / 5 of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.

Description

technical field [0001] The present invention relates to a semiconductor device in which a plurality of unit assemblies are provided and a control method and apparatus for driving the unit assemblies. Specifically, the present invention relates to a technique for reducing power consumption and improving the dynamic range of a physical quantity distribution sensing semiconductor device such as a solid-state imaging device. For example, in a physical quantity distribution sensing semiconductor device, unit components sensitive to externally input electromagnetic waves such as light and rays, such as unit pixels, are arranged in a matrix, and the physical quantity distribution is converted into electrical signals for readout. Background technique [0002] In various fields, physical quantity distribution sensing semiconductor devices in which unit components such as unit pixels sensitive to externally input electromagnetic waves such as light and rays ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N23/12H04N25/00
CPCH04N5/3745H04N5/378H04N5/3559H04N25/59H04N25/76H04N25/77H04N25/78H04N25/57H04N25/75
Inventor 马渕圭司
Owner SONY CORP
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