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Semiconductor light-emitting device

A technology for light-emitting elements and semiconductors, which is applied in the fields of semiconductor devices, electrical components, and electric solid-state devices, etc., can solve the problems of decreasing current density, and achieve the effects of improving luminosity, uniform light emission, and realizing miniaturization.

Active Publication Date: 2005-05-04
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] but Figure 8 ~ Figure 1 In the structure of 0, because the current freely spreads to the part other than the current blocking layer 28, the current density becomes smaller

Method used

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  • Semiconductor light-emitting device
  • Semiconductor light-emitting device
  • Semiconductor light-emitting device

Examples

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Comparison scheme
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Embodiment 1

[0065] figure 1 Example 1 of the present invention is shown. The semiconductor light emitting element 1 of Example 1 has in turn: an n-type GaAs substrate 3 including an n-type electrode 2 formed of AuGe; 4a, the AlGaInP active layer 5 and the light-emitting region layer 6 of the light-emitting layer composed of the p-type AlInP upper coating layer 4b; the p-type AlGaInP current diffusion layer 9; The p-type electrode 10 is constructed so that the n-type GaP current blocking layer 8 is partially formed in the current spreading layer 9 to confine light emission to the side of the light emitting region layer 6 . The current blocking layer 8 is composed of a central region 8a and an outer region 9b surrounded from the central region 8a by the region of the current diffusion layer 9, and the light emitting portion 7 obtained from the light extraction portion forms a ring shape.

[0066] P-type electrode 10 is designed to face central region portion 8 a of n-type GaP current blo...

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Abstract

A semiconductor light emitting element capable of obtaining uniform light emission and realizing miniaturization of the semiconductor light emitting element. It has: an n-type GaAs substrate (3); a light-emitting region layer (6) composed of an n-type AlInP lower coating layer (4a), an AlGaInP active layer (5) and a p-type AlInP upper coating layer (4b); p-type AlGaInP current diffusion layer (9); p-type electrode (10) made of AuZn; also has n-type GaP partially formed for confining light emission to the light-emitting region layer (6) side of the current diffusion layer (9) A current blocking layer (8); an n-type electrode (2) made of AuGe. Wherein, by forming the current blocking layer (8) from the central area portion (8a) and the outer area portion (8b) surrounded by the area portion of the current diffusion layer (9) from the central area portion (8a), the light The light-emitting portion (7) obtained by taking out the side is formed in a ring shape, and the electrode (10) is directed toward the central area portion (8a).

Description

technical field [0001] The present invention relates to a semiconductor light-emitting element, and more specifically, to a semiconductor light-emitting element in which a light-emitting portion obtained on a surface on a light extraction side is formed in a ring shape. Background technique [0002] Figure 8 ~ Figure 1 0 is a diagram of an existing semiconductor light-emitting element, wherein, Figure 8 is the floor plan, Figure 9 is a cross-sectional view, and FIG. 10 is an explanatory view of a light emitting state (for example, refer to Patent Document 1) [0003] exist Figure 8 ~ Figure 1 0, the semiconductor light-emitting element 21 has a light-emitting region layer (light-emitting layer) 26 composed of a lower coating layer 24a, an active layer 25, and an upper coating layer 24b, and a current diffusion layer in sequence on a substrate 23 provided with an electrode 22 on the back surface. 29. The electrode 30 further has a current blocking layer 28 in the center...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/30H01L33/38H01L33/40H01L33/62H05B33/00H05B33/14
CPCH01L33/145H01L2224/48463H01L2924/3025H01L2924/00
Inventor 金子和昭梅田浩佐佐木和明中村淳一
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD