Rotary device for regulating flow of spray head

Abstract

This invention relates to rotary spray flow adjusting device, which comprises at least two round discs and several relative groove sets, wherein the said two round discs are overlapped together and the groove sets are separately formed on the round discs located on the spray head. The groove sets are connected to the exit mouth of the spray to control the groove connection area and to control flow volume through the spray.

Description

technical field [0001] The invention relates to a rotary nozzle flow adjustment device, especially a nozzle flow adjustment device suitable for adjusting the nozzle flow. Background technique [0002] In the semiconductor industry, wafer processing uniformity is very important, and in order to achieve the best wafer processing uniformity, many process parameters are usually changed, especially when the wafer (Wafer) undergoes chemical vapor deposition (CVD) ), plasma-assisted chemical vapor deposition (PECVD), etching (etch) and other processes, the gas is usually ejected through the nozzle and reacts with the surface of the wafer, and by changing the gas flow rate, pressure, temperature of the nozzle In order to achieve the processing uniformity of the wafer, and in the processing process, it is often necessary to change various processing parameters in order to meet the requirements of wafer uniformity, so it takes a lot of time and manpower, but using this method to chang...

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Problems solved by technology

[0002] In the semiconductor industry, wafer processing uniformity is very important, and in order to achieve the best wafer processing uniformity, many process parameters are usually changed, especially when the wafer (Wafer) undergoes chemical vapor deposition (CVD) ), plasma-assisted chemical vapor deposition (PECVD), etching (etch) and other processes, the gas is usually ejected through the nozzle and reacts with the surface of the wafer, and by changing the gas flow rate, pressure, temperature of the nozzle In order to achieve the processing uniformity of the wafer, and in the processing process, it is often necessary to change various processing parameters in order to meet the requirements of wafer uniformity, so it takes a lot of time and manpower, but using this method to change various processing parameters Still on-wafer often produces process side effects, so not optimal process

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