Integrated circuit device

Abstract

In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided below the temperature monitor member. A region equal to or greater than a half of the entire temperature monitor member overlies the thermal conducting layer in a plan view.

Description

field of invention [0001] The invention relates to an integrated circuit device with a built-in monolithic temperature sensor. Background technique [0002] Recently, there has been an increasing need to monitor the operating temperature of integrated circuit devices in order to prevent thermal breakdown of devices in integrated circuit devices and to stabilize the operation of devices having temperature-dependent characteristics. [0003] In this regard, for example, Japanese Patent Laid-Open Publication H1-302849 discloses a technique of providing a temperature sensor on the same substrate as that of an LSI (Large Scale Integration). In this technique, a temperature sensor determines whether the LSI is abnormally overheated when the temperature detected by the temperature sensor exceeds a predetermined value, and then turns off the LSI. Therefore, the LSI can be protected from thermal breakdown due to temperature rise. Japanese Patent Laid-Open Publication No. H9-229778 ...

AI Technical Summary

Problems solved by technology

For example, when forming a resistor composed of vanadium oxide and measuring the temperature of an integrated circuit device by measuring the resistance of the resistor, the ambient temperature of the resistor may not be uniform due to the influence of the internal and external environments of the integrated circuit device

For example, the current flow of wiring etc. around the resistor locally raises the temperature, thus making the ambient temperature uneven

In this case, the internal temperature of the resistor becomes non-uniform, thus making the internal resistivity of the resistor non-uniform, with the result that the temperature cannot be measured accurately or stably

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