Film bulk acoustic-wave resonator and method for manufacturing the same

A technology of piezoelectric resonators and manufacturing methods, applied in the direction of electrical components, impedance networks, etc., can solve the problems of longer processing time, lowering, and shifting of resonance frequency, etc., and achieve the effect of easy film thickness control
CN1691498AInactive Publication Date: 2005-11-02KK TOSHIBA
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
KK TOSHIBA
Publication Date
2005-11-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention provided a thin film piezoelectric resonator that has an electro-mechanical coupling coefficient kt2and a Q value which are both large and is provided with a lower electrode whose film thickness can be easily controlled, and to provide its manufacturing method. The thin film piezoelectric resonator is equipped with a substrate 11, the lower electrode 14 which is mechanically held on the substrate 11, facing partially toward the hollow part of the substrate 11, a piezoelectric material 15 which is arranged on the lower electrode 14 so as to include it all inside the region occupied by the piezoelectric material 15 itself, an upper electrode 16 located on the piezoelectric material 15, a relay electrode 13 which is located on the border of the region occupied by the piezoelectric material 15 on a plane pattern between the substrate 11 and the piezoelectric material 15 and connected to the lower electrode 14 inside the region occupied by the piezoelectric material 15, and lower electrode wiring 17 which is extended outward from the border of the region occupied by the piezoelectric material 15 and connected to the relay electrode 13.
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Description

technical field

[0001] The present invention relates to a thin-film piezoelectric resonator, and more particularly to a thin-film piezoelectric resonator that utilizes longitudinal vibration in the thickness direction of a piezoelectric thin film and a method for manufacturing the same, which can be used as a high-frequency filter or a high-frequency oscillator. Background technique

[0002] In recent years, the wireless center technology has been developed by leaps and bounds, especially the development for the purpose of high-speed transmission continues. With the increase in the amount of information transmitted and the further increase in frequency, the requirements for miniaturization and light weight of high-frequency communication devices are even stronger. A wireless device is generally roughly divided into an RF front-end section that processes high frequency (RF), and a baseband (BB) section that performs digital signal processing. Among them, the BB part is a par...

Claims

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