Method for preparing ZnO ceramic film

A ceramic film and film technology, applied in non-metallic conductors, oxide conductors, etc., can solve the problems of reduced film performance, film surface defects, difficult to obtain films, etc., and achieves good compactness, uniform grain distribution, and is conducive to release. Effect

Inactive Publication Date: 2006-08-23
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The traditional sol-gel film making technology is difficult to obtain thicker films. The thickness of the prepared film is generally tens to hundreds of nanometers. When the film thickness increases, cracks are prone to appear and the performance of the film will be reduced.
In the process of film preparation, repeated coating, pre-firing and annealing make ZnO crystals grow continuously with the increase of film thickness, and finally reach 300nm. For films with a film thickness of only hundreds of nanometers, the film Surface may develop imperfections or inhomogeneities

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1 A kind of preparation method of ZnO ceramic film, comprising

[0013] (1) Prepare ZnO sol according to the usual method: take 5.4 g (0.0247 mol) of zinc acetate Zn(CH 3 COO) 2 ·2H 2 O is dissolved in 10-12 ml of ethylene glycol methyl ether, 1-2 ml of glacial acetic acid and 1-2 ml of ethanolamine are added, and stirred for 3-4 hours at 50°C to 60°C to form a stable and transparent sol;

[0014] (2) Take 60% of the above-mentioned sol, dry it first, then slowly heat it up to 650° C. to decompose the organic matter, and then grind it to prepare a ZnO nano-powder with a particle size of 30nm to 70nm;

[0015] (3) A dispersant is added to the above ZnO powder, and the dispersant can be a hydroxyl group and a polyalkoxy group compound POR (structural formula: R-(OC) 2 H 4 ) n OH, R is an organic chain) or polyethylene glycol (structural formula: H(OCH) 2 CH 2 ) 2 OH), the mass of which is 1-4% of the ZnO powder, after mixing, it is added to the remainin...

Embodiment 2

[0017] Embodiment 2 A kind of preparation method of ZnO ceramic film, comprising

[0018] (1) prepare ZnO sol by usual method;

[0019] (2) Take 70% of the above sol, dry it first, then slowly heat up to 600°C to decompose the organic matter, and then grind it to prepare ZnO nano-powder with a particle size of 30nm to 70nm;

[0020] (3) with (3) in embodiment 1;

[0021] (4) The film annealing temperature described in (4) in Example 1 was changed to 750° C., and the others were the same as (4) in Example 1.

Embodiment 3

[0022] Embodiment 3 A kind of preparation method of ZnO ceramic film, comprising

[0023] (1) prepare ZnO sol by usual method;

[0024] (2) take 80% of the above-mentioned sol and dry it, then slowly heat up to 550° C. to decompose the organic matter, and then grind it to prepare a ZnO nano-powder with a particle size of 30 nm to 70 nm;

[0025] (3) with (3) in embodiment 1;

[0026] (4) The film annealing temperature described in (4) in Example 1 was changed to 850° C., and the others were the same as (4) in Example 1.

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Abstract

The invention provides a process for preparing ZnO ceramic film comprising the steps of, preparing ZnO sol through the conventional sol-gal process, drying 60-80% of the sol, elevating the temperature to 550-650 deg. C, thus decomposing the organic matter and obtaining ZnO crystal, pan milling to prepare ZnO nano powder, charging dispersing agent into the ZnO powder, mixing and charging it into residue sol, preparing thin film having the needed thickness on the carrier, wherein the thin film annealing temperature is 500-850 deg. C.

Description

technical field [0001] The invention relates to a preparation method of a ZnO ceramic thin film. Background technique [0002] The traditional sol-gel method is difficult to obtain a thicker film, and the thickness of the prepared film is generally tens to hundreds of nanometers. When the film thickness increases, cracks are prone to occur, which reduces the film performance. During the preparation of the film, repeated coating, pre-burning and annealing make the ZnO crystal grow continuously with the increase of the film thickness, and finally reach 300 nm. For films with a film thickness of only a few hundred nanometers, the Surfaces may have defects or inhomogeneities. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to overcome the deficiencies of the above-mentioned prior art, and provide a preparation method of a ZnO ceramic thin film. The ZnO ceramic film prepared by this method has no cracks, good compactness and uniform grain distributio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/08C04B35/453C04B35/624
Inventor 姜胜林曾亦可李秀峰刘梅冬
Owner HUAZHONG UNIV OF SCI & TECH
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