Method for preparing ZnO ceramic film low-voltage piezoresistor

A technology of varistors and ceramic thin films, which is applied in the fields of varistors, varistor cores, and resistance manufacturing. Easy film thickness control, fast film formation, low temperature preparation effect

Inactive Publication Date: 2008-06-11
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, in the preparation of ZnO ceramic thin-film varistors, the film thickness used is generally tens to hundreds of nm. Because the film thickness is too small, the pressure-sensitive performance and stability are relatively poor, making it difficult for varistors to achieve Practical application requirements
To optimize its performance, it is necessary to increase the film thickness, and the increase of film thickness is prone to cracks, which will reduce the performance of the film

Method used

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  • Method for preparing ZnO ceramic film low-voltage piezoresistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1 A kind of preparation method of ZnO ceramic film low voltage varistor, comprising

[0015] (1) Prepare ZnO sol according to the usual method: take 5.4 grams (0.0247mol) of zinc acetate Zn (CH 3 COO) 2 2H 2 Dissolve 0 in 10-12 ml of ethylene glycol methyl ether, add 1-2 ml of glacial acetic acid, 1-2 ml of ethanolamine, and stir for 3-4 hours at 50°C-60°C to form a stable and transparent sol;

[0016] In the above sol, doped bismuth ions Bi 3+ , antimony ion Sb 3+ , manganese ion Mn 2+ , chromium ion Cr 3+ and cobalt ion Co 3+ , press Zn 2+ : Bi 3+ :Sb 3+ :Mn 2+ :Cr 3+ :Co 3+ =100:0.6:2.0:1.0:0.5:1.0 molar ratio, bismuth nitrate Bi(NO 3 ) 3 , antimony chloride SbCl 3 , manganese acetate Mn(CH 3 COO) 2 , chromium nitrate Cr(NO 3 ) 3 and cobalt nitrate Co(NO 3 ) 3 , forming a uniform and stable sol;

[0017] (2) Take 60% of the above sol, dry it first, then slowly heat up to 650°C to decompose the organic matter, and then grind it to prep...

Embodiment 2

[0020] Embodiment 2 A kind of preparation method of ZnO ceramic film low-voltage varistor, comprising

[0021] (1) prepare ZnO sol by usual method;

[0022] In the above sol, doped bismuth ions Bi 3+ , antimony ion Sb 3+ , manganese ion Mn 2+ , chromium ion Cr 3+ and cobalt ion Co 3+ , press Zn 2+ : Bi 3+ :Sb 3+ :Mn 2+ :Cr 3+ :Co 3+ =100:1.4:1.6:0.6:3.0:2.0 molar ratio, bismuth chloride BiCl can be added 3 , antimony acetate Sb(CH 3 COO) 3 , manganese nitrate Mn(NO 3 ) 2 , chromium acetate Cr(CH 3 COO) 3 and cobalt acetate Co(CH 3 COO) 3 , forming a uniform and stable sol;

[0023] (2) Take 70% of the above sol, dry it first, then slowly heat up to 600°C to decompose the organic matter, and then grind it to prepare ZnO nanopowder with a particle size of 30nm to 70nm;

[0024] (3) with (3) in embodiment 1;

[0025] (4) Change the annealing temperature of the thin film 3 described in (4) in Example 1 to 750° C., and the others are the same as (4) in Example ...

Embodiment 3

[0026] Embodiment 3 A kind of preparation method of ZnO ceramic film low voltage varistor, comprising

[0027] (1) prepare ZnO sol by usual method;

[0028] In the above sol, doped bismuth ions Bi 3+ , antimony ion Sb 3+ , manganese ion Mn 2+ , chromium ion Cr 3+ and cobalt ion Co 3+ , press Zn 2+ : Bi 3+ :Sb 3+ :Mn 2+ :Cr 3+ :Co 3+ =100:1.0:3.0:0.2:2.0:3.0 molar ratio, bismuth nitrate Bi(NO 3 ) 3 , antimony chloride SbCl 3 , manganese acetate Mn(CH 3 COO) 2 , chromium acetate Cr(CH 3 COO) 3 and cobalt acetate Co(CH 3 COO) 3 , forming a uniform and stable sol;

[0029] (2) Take 80% of the above sol, dry it first, and then slowly heat up to 550°C to decompose the organic matter, and then grind it to prepare ZnO nanopowder with a particle size of 30nm to 70nm;

[0030] (3) with (3) in embodiment 1;

[0031] (4) Change the annealing temperature of the thin film 3 described in (4) in Example 1 to 850° C., and the others are the same as (4) in Example 1.

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Abstract

Disclosed is a manufacture method of ZnO ceramics film low voltage dependent resistor, comprising bismuth ion Bi 3+,antimony ion Sb3+, manganese ion Mn2+, chrome ion Cr3+ and cobalt ion Co3+ distributing in ZnO sol , and their mol ratio is: Zn2+ Bi3+ Sb3+ Mn2+ Cr3+ Co3+ =100: (0.6~1.4) : (1.6~3.0) : (0.2~1.0) : (0.5~3.0) : (1.0~3.0). The temperature of sol of 60~80% is raised to 550deg.C~650deg.C after baking to decompose organic matter, then ZnO crystal formed is milled to be ZnO nanometer powder whose diameter is 30nm~70nm, add dispersion agent into the ZnO powder and then they are added into the remain sol after mixing, at last ZnO ceramics film low voltage voltage dependent resistor is made on monocrystalline sillicon substrate. The production made by the invention has excellent electric performance, voltage dependent voltage lower than 4V, nonlinear coefficient of 22 and density of leakage current smaller than 0.4uA / nm2.

Description

technical field [0001] The invention relates to a preparation method of a ZnO ceramic film varistor. Background technique [0002] At present, in the preparation of ZnO ceramic thin-film varistors, the film thickness used is generally tens to hundreds of nm. Because the film thickness is too small, the pressure-sensitive performance and stability are relatively poor, making it difficult for varistors to achieve Practical application requirements. In order to optimize its performance, it is necessary to increase the film thickness, and the increase of film thickness is prone to cracks, which will reduce the performance of the film. Contents of the invention [0003] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a method for preparing a ZnO ceramic film low-voltage varistor. In this method, by doping bismuth ions Bi 3+ , antimony ion Sb 3+ , manganese ions Mn 2+ , chromium ion Cr 3+ , cobalt ion Co 3+...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/112H01C7/10H01C17/00
Inventor 姜胜林曾亦可李秀峰刘梅冬
Owner HUAZHONG UNIV OF SCI & TECH
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