Folded-flex bondwire-less multichip power package

Abstract

A multichip wirebond-less integrated circuit and power die package is based on a folded single-layer flex circuit. The package is formed with metal-studbumped power dies and IC's flipchiped to a patterned flex substrate. Extensions of the flex substrate are folded and attached to the backside of the dies for electrical and / or thermal contact. I / O pins are along the periphery of the package for standard SMT mounting while heatspreaders are attached to both sides of the package for double-sided cooling.

Description

technical field [0001] The present invention relates to integrated power modules, and more particularly to folded, flexible, bond-wireless, multi-chip power modules for high power densities. Background technique [0002] Applications requiring high power conversion, such as microprocessors, automotive electronics, and voltage regulators for communications, have created a trend toward higher power density at lower cost. Therefore, in order to meet future power density requirements, integrated power module solutions are required instead of traditional discrete solutions. But the integration of power electronic components (such as devices, ICs, passive components, etc.) in the form of modules is complicated by the presence of a wide variety of materials in the modules. [0003] Only recently have two commercially available state-of-the-art multi-chip power packages for DC-DC power conversion provide an integrated system solution. The first commercially available packages for ...

AI Technical Summary

Problems solved by technology

Also, the complex lead connections and tight spacing requirements of these packages complicate the design of thermal vias on the board, which is important for proper thermal arrangement

[0006] Both currently available commercial packages use multiple wire bonds per device and IC interconnects to reduce the high resistance effects of the wire bonds

But adding more parallel leads to lower the resistance eventually reaches the limit (2-3mΩ) and the process becomes very expensive

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