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Unit structure for realizing multi-bit memory
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A cell structure and multi-bit storage technology, which is applied in the field of devices in the field of microelectronics technology, can solve problems such as difficult to achieve and data repeatability problems, and achieve the effects of ensuring repeatability, improving storage density, and good stability
Inactive Publication Date: 2006-03-08
SHANGHAI JIAO TONG UNIV +1
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However, when the structure of the single-layer phase change medium is rewritten, there will be problems with the repeatability of the data
Because the recrystallized chalcogenide thin film must achieve the same amorphization ratio under the same magnitude of electric pulse, and the amorphization ratio must be controlled very precisely to obtain the same resistance value, and this is in actual operation inaccessible
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Embodiment 1
[0018] Such as figure 1 As shown, the present invention includes: substrate 1, lower electrode 2, phase change layers 3, 4, 5, heating layers 6, 7, 8, barrier layers 9, 10, 11, 12, upper electrode 13, insulating sidewall 14, Substrate 1 is arranged on the lowermost layer, lower electrode 2 is arranged on the top of substrate 1, upper electrode 13 is arranged on the uppermost layer, phase change layers 3, 4, 5 are arranged between lower electrode 2 and upper electrode 13, barrier layer 9 is arranged Between the lower electrode 2 and the phase change layer 3, the barrier layer 12 is disposed between the phase change layer 5 and the upper electrode 13, the barrier layer 10 is disposed between the phase change layer 3 and the phase change layer 4, and the barrier layer 11 is disposed between the phase change layer 3 and the phase change layer 4. Between the phase change layer 4 and the phase change layer 5, the heating layers 6, 7, 8 are respectively arranged in the middle of the ...
Embodiment 2
[0025] Such as figure 2 As shown, the present invention includes: a base 1, a lower electrode 2, different phase change layers 3, 4, 5 of phase change materials, a heating layer 6, an upper electrode 13, and an insulating side wall 14, the base 1 is arranged at the bottom layer, and the base 1 is provided with the lower electrode 2, the upper electrode 13 is arranged on the uppermost layer, the phase change layers 3, 4, 5 are arranged between the lower electrode 2 and the upper electrode 13, the heating layer 6 is arranged in the middle of the phase change layer 4, and the lower electrode 13 is arranged on the uppermost layer. The electrode 2 , the phase change layers 3 , 4 , 5 , the heating layer 6 , and the upper electrode 13 are all arranged in the pores of the insulating side wall 14 .
[0026] The materials of the phase change layers 3, 4, 5 are chalcogenide compounds and dopants of chalcogenide compounds and N, O, Si or Sn. The transition of chalcogenides between amorp...
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Abstract
The disclosed structure includes substrate, lower pole, phase change, heating layer, barrier layer, upper pole, insulating sidewall. The substrate is in undermost layer; the lower pole is setup on the substrate; the upper pole is setup at upper most layer. There are at least three phase change layers between the lower pole and the upper pole. The barrier layers are setup between upper pole and phase change layer, between lower pole and phase change layer as well as between phase change layers. Heating layer, lower pole, phase change layer and heating layer are setup in middle of each phase change layer. The barrier layer and the upper pole are setup inside small hole of the insulating sidewall. The invention raises density of data storage and stability of multidigit storage.
Description
technical field [0001] The invention relates to a device in the technical field of microelectronics, in particular to a unit structure capable of realizing multi-bit storage. Background technique [0002] The phase change memory (Phase Change Memory, PRAM) is based on the phase change of the storage medium. The principle is that the storage medium undergoes a repeatable transition between the crystalline state and the amorphous state due to the thermal effect, so that the storage unit is in the low resistance- Reversible change between high resistance states. When the power is cut off, PRAM can still keep the stored information, so it is especially suitable for portable mobile information terminals. The advantage of PRAM is that it can read and write information at high speed, and its durability is also excellent. It can achieve more than 1013 trouble-free write / erase operations, making the produced memory as low-power non-volatile It operates like RAM and is a new generat...
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