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Vaporizer for CVD apparatus

A gasification, solution technology, applied in gaseous chemical plating, chemical instruments and methods, dispersed particle filtration, etc., can solve the problems of solution piping and gasifier blockage, etc.

Inactive Publication Date: 2006-04-05
U TEC CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in the case of the solution vaporization type, although the deposition rate is fast, there is a problem that a chemical reaction occurs in the solution state, and there is a problem of clogging the solution piping and the vaporizer, etc.
Due to clogging, the CVD unit can only be operated continuously for a short time

Method used

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  • Vaporizer for CVD apparatus
  • Vaporizer for CVD apparatus
  • Vaporizer for CVD apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0048] figure 1 It shows the structure of the vaporizer related to the first embodiment of the present invention.

[0049] This vaporizer vaporizes a solution in which a solid or liquid organic metal compound is dissolved as a solvent at room temperature, and supplies the vaporized raw material gas to the solution vaporization type CVD device. The vaporizer has a solution supply system, and this solution supply system has first to fifth raw material solution pipes 21-25.

[0050] The bottom end side of the first raw material solution pipe 21 is connected to a first supply mechanism (not shown) that supplies the raw material solution and the solvent. The first supply mechanism is provided for supplying a raw material solution (for example, Sr[Ta(OEt) 5 (OC 2 H 4 OMe)] 2 The supply source of the solution) and the supply source for supplying the solvent (for example, ethylcyclohexane ECH). Between the supply source of the raw material solution and the piping 21 for the first raw ma...

no. 2 example

[0082] figure 2 To show the structure of the vaporizer according to the second embodiment of the present invention, and figure 1 The same parts have the same symbols, and detailed descriptions thereof are omitted, and they are also the same in the following embodiments.

[0083] In this embodiment, the bottom end side of the vaporization tube 34 has a spherical shape. Thereby, the bottom end side of the vaporization pipe 34 can be uniformly heated.

no. 3 example

[0085] image 3 This is a diagram showing the configuration of a vaporizer according to the third embodiment of the present invention.

[0086] Instead of figure 1 The illustrated heat insulating material (polytetrachloroethylene encapsulating material, etc.) 14 is provided with a metal shield (metalseal) 61. Since the metal shield 61 corresponds to an ultra-high vacuum, has the characteristics of mechanical strength and high heat resistance, the heating temperature of the vaporization tube 35 can be increased to 300° C. or more. However, since the temperature of the orifice tube also rises, clogging of pores and the like due to the precipitation of solid raw materials is likely to occur. Therefore, in this case, for example, the number of washing steps may be appropriately increased to prevent clogging.

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Abstract

The invention provides a solution gasifying VCD device, which is able to high precisely control the flow capacity of the VCD used raw material solution for a long time. The solution gasifying VCD device has a gasifier which comprises an orifice pipe, pathways 21 to 25 for at least one raw material solution, a carrier gas pathway 33, a gasification pipe 13 and a pore; wherein, the orifice pipe enables at least one raw material solution to be dispersed into fine particles or mist in carrier gas, the pathways 21 to 25 for at least one raw material solution supply at least one raw material solution to the orifice pipe in a mutually isolating way, the carrier gas pathway 33 supplies the carrier gas to the orifice pipe in the same mutually isolating way as that of at least one raw material solution, the gasification pipe 13 enables at least one raw material solution dispersed at the orifice pipe to be gasified, and the pore connects the gasification pipe with the orifice pipe and leads in the raw material solution dispersed at the orifice pipe to the gasification pipe.

Description

Technical field [0001] The present invention relates to a solution vaporization type chemical vapor deposition [CVD (chemical vapor deposition)] apparatus, and particularly relates to a solution vaporization type CVD apparatus that can control the flow rate of a raw material for CVD with high accuracy. Background technique [0002] The well-known CVD is a technique for depositing thin films of various compositions on a semiconductor substrate made of silicon or the like by causing a chemical reaction by flowing a gaseous reaction material in a reactor. Regarding the formation of a thin film by CVD, it is necessary to prepare a gaseous reaction material as a technical premise. However, the film formed by CVD has relatively good film quality and step coverage. It is hoped to eliminate the preconditions of this technology and make CVD suitable for the manufacture of various semiconductor components and semiconductor integrated circuits. [0003] For example, explain the occasion of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/448
CPCC23C16/52C23C16/4412C23C16/4401C23C16/4486
Inventor 矢元久良腰前伸一
Owner U TEC CO LTD