Non-volatile device manufactured using ion-implantation and method of manufacture the same

Abstract

A nonvolatile memory device fabricated using ion implantation and a method of fabricating the device are disclosed. A dielectric layer is formed on a semiconductor substrate, and an ion implantation layer serving as a charge trapping site is formed by ion implantation using Si or Ge. Then, an annealing process is performed. Next, a process for forming transistors on the dielectric layer is performed.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a nonvolatile device manufactured using ion implantation, and a method for manufacturing the device. Background technique [0002] Non-volatile memory devices, such as EEPROM, retain their data even when there is no power. A nonvolatile memory device includes a charge trap layer for trapping charges interposed between a gate and a channel of a transistor so that a threshold voltage can be varied. [0003] figure 1 is a cross-sectional view of a conventional nonvolatile memory device. [0004] refer to figure 1 , the gate 20 is formed above the semiconductor substrate 10, the source region 51 and the drain region 55 are formed in the semiconductor substrate 10 on both sides of the gate 20, and the channel 11 is formed in the source region 51 and the drain region 55 between the semiconductor substrate 10. The source region 51 and the drain region 55 may have a lightly...

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Problems solved by technology

Therefore, such conventional nonvolatile memory devices have relatively narrow memory windows

[0013] In addition, the above method involves complex process

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