Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hot-press printing method

一种热压印、压模的技术,应用在热压印领域,能够解决成本高、操作复杂等问题,达到成本低、操作简单、利于高精度转移的效果

Inactive Publication Date: 2006-05-31
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF3 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the disadvantages of complex operation and high cost of the thermal embossing method in the prior art, the present invention provides a thermal embossing method with simple operation, low cost, and high pattern transfer accuracy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hot-press printing method
  • Hot-press printing method
  • Hot-press printing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with accompanying drawing.

[0027] see Figure 2(a)~2(d) , the thermal embossing method provided by the present invention, it comprises the following steps:

[0028] As shown in Figure 2 (a), a substrate 30 is provided, which is a polymer material, and at its glass transition temperature (hereinafter referred to as T g Indicates that) has better fluidity; for example, polymethyl methacrylate (PMMA), its glass transition temperature T g About 105°C;

[0029] A stamper 20 is provided, which is composed of a stamper body 21 , a predetermined pattern of convex structures 22 formed on the stamper body 21 , and concave structures (not shown) between adjacent convex structures. The die material is harder than the base material, and has the characteristics of high Knoop hardness (Knoop micro-indentation hardness), high compressive strength, high tensile strength, high thermal conductivity, low th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A hot embossing method includes for generating the nano-class pattern on high-molecular material includes such steps as providing a substrate and a pressing die with predefined pattern, aligning them in a vacuum chamber, filling the vapor of micro-molecular substance, heating, pressing, cooling and separating the substrate from pressing die.

Description

【Technical field】 [0001] The invention relates to a thermal embossing method, in particular to a thermal embossing method for forming a micro-nano pattern structure on a polymer material. 【Background technique】 [0002] Hot embossing technology is a technology that can repeatedly prepare nano-pattern structures in large quantities. At present, it is widely used in the preparation of micro-electromechanical chips, CD (Compact Disk) storage and magnetic storage, photoelectric and optical devices, biochips and microfluidic devices. [0003] Hot Embossing Lithography (HEL for short) was first proposed by Stephen Y. Chou in 1995 and a corresponding patent application was filed, see US Patent No. 5,772,905. The process of this hot embossing technology can be found in Figure 1(a)~1(d) . As shown in Figure 1(a), a stamper 200 is provided, which is composed of a stamper body 201, a convex structure 202 of a micro-relief structure, and a concave structure (not shown) between adjace...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B41M5/26B41M1/26B41M5/00
CPCB82Y10/00B82Y40/00G03F7/0002Y10S977/887
Inventor 余泰成
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products