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System and method for forming patterns on basis material

A base material and pattern technology, which is applied in semiconductor/solid-state device manufacturing, photosensitive material processing, photo-plate making process exposure devices, etc., can solve the problems of product lack and inconvenience, and achieve simple, cheap and easy-to-analyze machines degree of effect

Active Publication Date: 2010-05-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It can be seen that the above-mentioned existing system for making patterns on the substrate obviously still has inconvenience and defects in structure, method and use, and needs to be further improved urgently.
In order to solve the problems existing in the system of manufacturing patterns on the substrate, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general product has no suitable structure to solve it. The above-mentioned problems are obviously the problems that relevant industry players are eager to solve

Method used

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  • System and method for forming patterns on basis material
  • System and method for forming patterns on basis material
  • System and method for forming patterns on basis material

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Embodiment Construction

[0105] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the following in conjunction with the accompanying drawings and preferred embodiments, the method and system for manufacturing patterns on the substrate proposed according to the present invention and its specific implementation methods, The structure, manufacturing method, steps, features and functions thereof are described in detail below.

[0106] Please see first figure 1, which shows a schematic diagram of an apparatus 5 that can be used to form a standing wave interference pattern between two coherent light beams. The single incident light beam 10 enters the beam splitter 20 , wherein the single incident light beam 10 can be generated, for example, by a laser or other monochromatic light source with high spatial and temporal coherence. In the present invention, the single incident light beam 10 can be a laser beam, and the laser w...

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Abstract

Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to an interference lithography system and method for fabricating patterns in photosensitive materials. Background technique [0002] This application is a continuation-in-part of US Patent Application Serial No. 10 / 309,427, filed December 4, 2002, which is hereby incorporated by reference. [0003] In general, the fabrication of microelectronic integrated circuits involves patterning device structures and layouts on semiconductor substrates. The accepted way of making the desired pattern is to create a replica of the pattern on a reticle (not necessarily to its final dimensions), then transfer the reticle pattern to a layer of photosensitive material, either positive or negative, on a semiconductor substrate. resistance. The transfer of the pattern can be achieved by the optical lithography process to project a certain wavelength of light onto the photore...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02B27/60G03F7/26G03F7/039G03F9/00G02B27/18G03F7/00
CPCG03F7/201G03F7/203G03F7/001G03F7/70408G03F7/70466
Inventor 林进祥林本坚
Owner TAIWAN SEMICON MFG CO LTD