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Method for making picture element structure

A technology of pixel structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve problems such as breakage of reflective electrode 68, and achieve the effect of not being easily broken

Inactive Publication Date: 2006-09-06
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Although the above-mentioned U.S. Patent No. 6,490,019 can improve the possibility of breakage of the reflective electrode 68, it is necessary to additionally form the first insulating layer 50 in the process.
In addition, since the depth of the concave portion 66a is deep, even if the concave portion 66a is relatively smooth, the reflective electrode 68 may still be broken.

Method used

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  • Method for making picture element structure
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  • Method for making picture element structure

Examples

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no. 1 example

[0040] Figure 2A to Figure 2F A cross-sectional view showing a method for manufacturing a pixel structure according to a first embodiment of the present invention, and Figure 2G shows a cross-sectional view of another method for manufacturing a pixel structure according to the first embodiment of the present invention, and image 3 for Figure 2F top view. Please refer to Figure 2A and image 3 , the manufacturing method of the pixel structure of the present invention can manufacture the pixel structure for the transflective liquid crystal display panel or the total reflection liquid crystal display panel, and this embodiment will use the pixel structure of the total reflection liquid crystal display panel as Example to illustrate. The manufacturing method of the pixel structure of the present invention includes the following steps: firstly, a substrate 110 is provided, and the substrate 110 can be a glass substrate, a quartz substrate or other types of substrates. In...

no. 2 example

[0049] Figure 4A to Figure 4B A cross-sectional view showing a method for manufacturing a pixel structure according to a second embodiment of the present invention, and Figure 5 for Figure 4B top view. Figure 4C and Figure 4D A cross-sectional view illustrating another method for manufacturing a pixel structure according to the second embodiment of the present invention. Please refer to Figure 4A and Figure 5 , this embodiment is similar to the above embodiment, the difference is that in this embodiment, the method of forming the second through hole 312a and the second depression 312b is a wet etching process, so the second depression 312b can have a spherical surface shaped shape.

[0050] Please refer to Figure 4B and Figure 5 , after removing the patterned photoresist layer 210, a transparent conductor layer 160 is formed on the patterned dielectric layer 310, wherein the transparent conductor layer 160 covers and forms the second through hole 312a and the ...

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Abstract

The present invention discloses a dot structure manufacturing method. It contains providing a substrate formed with a scanning wiring, a data wiring and an active element, wherein active element and scanning wiring and data wiring being electrically connected, forming dielectric layer substrate, forming patterning photoresist layer on dielectric layer, wherein patterning photoresist layer having a first pass through hole and plurality of first cave, first pass through hole exposing partial dielectric layer, using patterning photoresist layer as shade to remove partial dielectric layer for forming patterning dielectric layer, wherein patterning dielectric layer having a second pass through hole and plurality of second cave, and second pass through hole exposing partial active element, then removing patterning photoresist layer, forming reflecting layer on patterning dielectric layer, wherein reflecting layer covering second cave and reflecting layer connected with active element. Said invented second cave depth and outline can be comparatively controlled, said reflecting layer unease to generate broke up phenomena.

Description

technical field [0001] The present invention relates to a method for manufacturing a pixel structure, and in particular to a method for manufacturing a pixel structure for a transflective LCD panel or a reflective LCD panel method. Background technique [0002] Generally, thin film transistor liquid crystal displays can be classified into three categories: transmissive, reflective and transflective. The classification is based on the utilization of light source and the difference of array substrates (array). Among them, a transmissive TFT-LCD mainly uses a backlight as a light source, and the pixel electrodes on the TFT array substrate are transparent electrodes to facilitate light from the backlight to penetrate. In addition, reflective TFT-LCD mainly uses front-light or external light source as the light source, and the pixel electrodes on the thin-film transistor array substrate are made of metal or other reflective materials with good reflective properties. The electro...

Claims

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Application Information

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IPC IPC(8): H01L21/84G02F1/1362
Inventor 姚启文
Owner AU OPTRONICS CORP
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