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Solid-state imaging device

A solid-state imaging device and semiconductor technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as difficulty in maintaining the maximum number of electrons, reduction in size of photodiode 112, decrease in sensitivity of the maximum number of electrons, etc.

Inactive Publication Date: 2006-10-18
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the problem that exists is, in Figure 13 In the shown MOS imaging device, the maximum number of electrons (the number of saturated electrons) that can be stored in the photodiode 112 and the sensitivity decrease compared with the MOS imaging device in which the p-well 131 is not formed.
[0021] Also, in recent years, since the size of the photodiode 112 tends to decrease due to the reduction in pixel size accompanying the increase in the number of pixels, it is difficult to maintain the maximum number of electrons.

Method used

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Embodiment approach 1

[0048] Refer to the following figure 1 ˜ FIG. 3 illustrate the solid-state imaging device according to Embodiment 1 of the present invention. The solid-state imaging device of Embodiment 1 is a MOS type imaging device having the same Figure 12 The shown conventional MOS imaging device has the same circuit structure, but is different in cross-sectional structure. This is explained below.

[0049] use figure 1 The cross-sectional structure of the solid-state imaging device according to Embodiment 1 will be described. figure 1 is a cross-sectional view of the structure of the solid-state imaging device according to Embodiment 1 of the present invention. Such as figure 1 As shown, the p well 31 is formed on the semiconductor substrate 30 so as to overlap the photoelectric conversion portion 32 and the signal detection portion 33 in the thickness direction of the semiconductor substrate 30 . In other words, the p well 31 is formed such that its formation region overlaps w...

Embodiment approach 2

[0073] Next, refer to Figure 4 A solid-state imaging device according to Embodiment 2 of the present invention will be described with FIG. 5 . The solid-state imaging device of Embodiment 2 is also a MOS type imaging device, which has the same Figure 12 The shown conventional MOS imaging device has the same circuit configuration.

[0074] First, use Figure 4 The cross-sectional structure of the solid-state imaging device according to Embodiment 2 will be described. Figure 4 is a cross-sectional view showing the structure of the solid-state imaging device according to Embodiment 2 of the present invention. Moreover, in Figure 4 in, labeled figure 1 The part of the symbol shown is with the figure 1 The parts shown are the same as the parts.

[0075] Such as Figure 4 As shown, in this second embodiment, a second p well 60 is formed in the upper layer of the p well 31 of the semiconductor substrate 30 , and the interface on the surface layer side coincides with the ...

Embodiment approach 3

[0089] Next, refer to Figure 6 A solid-state imaging device according to Embodiment 3 of the present invention will be described. The solid-state imaging device of Embodiment 3 is also a MOS type imaging device, and has the same Figure 12 The shown conventional MOS imaging device has the same circuit configuration. Figure 6 is a cross-sectional view showing the structure of the solid-state imaging device according to Embodiment 3 of the present invention. Moreover, in Figure 6 marked in figure 1 and Figure 4 The part of the symbol shown is with the figure 1 and Figure 4 The parts shown are the same as the parts.

[0090] Such as Figure 6 As shown, in this third embodiment, a p-type buried region 70 having a higher impurity concentration than the p-well 31 is formed in the lower layer of the p-well 31 of the semiconductor substrate 30 . The interface on the surface layer side of buried region 70 coincides with the interface on the lower layer side of p well 31 ...

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Abstract

A solid-state imaging device including an n-type semiconductor substrate including a photoelectric conversion portion, and a signal detection portion for detecting a signal charge is used. The photoelectric conversion portion is provided with a photodiode, and a p-well that overlaps the photoelectric conversion portion and the signal detection portion when viewed in a thickness direction of the semiconductor substrate is formed in the semiconductor substrate. The p-well is formed so that a surface side interface is located below a surface side interface of the photodiode. Preferably, the surface side interface of the p-well is located below a lower side interface of the photodiode and an impurity profile of the p-well does not overlap that of the photodiode. At this time, a non-dope region is present between the photodiode and the p-well.

Description

technical field [0001] The present invention relates to a solid-state imaging device. Background technique [0002] Conventionally, as main solid-state imaging devices, MOS type imaging devices and CCD (Charge Coupled Device) imaging devices are known. In this MOS imaging device, incident light is converted into signal charges by a photoelectric conversion region (photodiode), and the signal charges are amplified by transistors. To describe in detail, the potential of the photoelectric conversion region is modulated by signal charges generated by photoelectric conversion. Also, the amplification factor of the amplifying transistor varies with its potential. [0003] Also, in the case of a MOS imaging device, a transistor for amplifying signal charges is included in the pixel portion. Therefore, the point that MOS type image pickup devices can easily accommodate the reduction in pixel size and the increase in the number of pixels has attracted attention. In addition, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/10H04N5/335H04N5/359H04N5/369H04N5/374
CPCH01L27/14609H01L27/14627H01L27/1463H01L27/14643H01L27/14654H01L27/14689
Inventor 胜野元成松长诚之
Owner PANASONIC CORP