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Method of substrate processing and apparatus for substrate processing

A substrate processing method and silicon compound technology, which are applied in the fields of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as adverse effects of substrate impurity distribution

Inactive Publication Date: 2006-10-25
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, when the heating temperature is increased, there is a problem that the thermal history caused by the high-temperature annealing will adversely affect the impurity distribution in the substrate.

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  • Method of substrate processing and apparatus for substrate processing
  • Method of substrate processing and apparatus for substrate processing
  • Method of substrate processing and apparatus for substrate processing

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Embodiment Construction

[0028] Below, refer to Figure 1 to Figure 6 , the embodiment of the substrate processing method and the substrate processing apparatus of the present invention will be described.

[0029] figure 1 It is a cross-sectional view showing MOSFET 11 to which the processing method of the present invention is applied. In the figure, reference numeral 13 denotes a Si substrate. On both sides of the Si substrate 13, a source 15 and a drain 17 are provided as impurity diffusion layers. In the exposed portion of the Si substrate between the source 15 and the drain 17 , a gate 21 made of polysilicon is provided via a gate oxide film 19 . Then, side walls 23 are provided on both sides of the gate 21 .

[0030] Such a MOSFET11 with Figure 4 A substrate processing apparatus 41 is shown for processing. This substrate processing apparatus 41 has a transfer chamber 43 at the center. In this transfer chamber 43, a transfer device for transferring wafers is provided. In this transfer ch...

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Abstract

In the provided method of substrate processing and apparatus for substrate processing, natural oxide films formed on surface layers of MOSFET (11) gate (21), source (15) and drain (17) are removed with activated NF3 gas. Co film (91) is formed on the surfaces of gate (21), source (15) and drain (17) after removal of the natural oxide films. The MOSFET is subjected to low-temperature anneal, and the Co film (91) is reacted with the silicon compounds of gate (21), source (15) and drain (17), thereby forming a metal silicide layer on the surface layer of the silicon compounds. Thus, there can be provided a processing method not requiring high-temperature anneal wherein thermal history adversely affects the impurity distribution within the substrate.

Description

technical field [0001] The invention relates to a substrate processing method and a processing device for forming a metal silicide layer on the surface layer of a Si-based material layer. Background technique [0002] With the high integration of semiconductor devices, for example, in MOSFETs, it is more important to reduce the resistance of the source and drain as the impurity diffusion layer. [0003] As a method of reducing the resistance of the impurity diffusion layer, a silicidation method has been developed in which a metal silicide layer having low resistance is formed on the surface of the impurity diffusion layer. The silicide method is to deposit a thin metal film that can be silicided on the entire surface of the Si-based material layer, and perform heat treatment (silicide annealing) to allow the silicide reaction to proceed at the part where the metal film is in contact with the Si-based material layer, thereby forming The metal silicide method. [0004] In o...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/285H01L21/336H01L29/417H01L29/423H01L29/49H01L29/78
CPCH01L21/28052H01L21/28518H01L29/665H01L21/24
Inventor 小林保男桥本毅
Owner TOKYO ELECTRON LTD