Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma processing system

A processing system and plasma technology, applied in the field of semiconductor processing systems, can solve the problems of high price and large size of matching circuits

Active Publication Date: 2006-11-08
TOKYO ELECTRON LTD
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, these types of matching circuits may become expensive, large-scale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing system
  • Plasma processing system
  • Plasma processing system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0079] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the following description, the same code|symbol is attached|subjected to the component which has substantially the same function and structure, and it repeats description only when necessary.

[0080] figure 1 It is a typical block diagram of the processing system of one embodiment of this invention. figure 1 The illustrated processing system 100 may include an etching system such as a plasma etcher. Instead, figure 1 The illustrated processing system 100 may include deposition systems such as chemical vapor deposition (CVD) systems, physical vapor deposition (PVD) systems, atomic layer deposition (ALD) systems, and / or combinations thereof.

[0081] In one embodiment of the present invention, the processing system 100 includes a first RF power source 110 , a first matching circuit 115 , a processing chamber 120 and a monitoring device 160 . In addition...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A processing system (100) includes a processing chamber (120) having a substrate holder (130) and an electrode (125). The processing system includes a compression control system, a gas supplying system, and a monitor device (160). The electrode (125) is connected to a multi-frequency RF power supply (110) via a matching circuit (115) having a single variable element. The multi-frequency RF power supply is set to a first frequency so as to ignite plasma or set to a second frequency so as to sustain the plasma.

Description

technical field [0001] The present invention relates to semiconductor processing systems, and more particularly to semiconductor processing systems using variable frequency RF sources. Here, the so-called semiconductor processing refers to forming a semiconductor layer, an insulating layer, a conductive layer in a predetermined pattern on a substrate to be processed such as a semiconductor wafer, a glass substrate for an LCD (Liquid Crystal Display), or a FPD (Flat Panel Display). Layers, etc., are various processes performed to manufacture structures including semiconductor devices, wiring, electrodes, etc. connected to the semiconductor devices on the substrate to be processed. Background technique [0002] In the semiconductor industry, plasma is utilized in the manufacture of integrated circuits (ICs). Plasma is commonly used to create or assist surface chemical reactions in plasma reactor furnaces required to remove material from or deposit material on a substrate. Ty...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01J37/32H01L21/205H01L21/324H01L21/42
CPCH01J37/321H01J37/32174H01J37/32935
Inventor 三好秀明格姆努·兰吉特·达马塞纳东浦勉杰克A·吉尔摩约瑟夫J·奥瑟伯恩特蕾莎·贝泽
Owner TOKYO ELECTRON LTD