Structure of storage capacitance in panel display, and manufacturing method
A flat-panel display and storage capacitor technology, which is applied in the manufacture of semiconductor/solid-state devices, static indicators, circuits, etc., can solve the problems of insufficient conductivity of electrodes, failure of storage capacitors, and inability to form heavily doped P-type polysilicon, etc.
Inactive Publication Date: 2006-12-06
TPO DISPLAY
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However, when it is desired to use the gate structure 36 as a mask to perform a P-type dopant implantation process on the second essential polysilicon structure 221 to form a source / drain structure (as shown in FIG. 4( b ), The bottom electrode of the storage capacitor completed by the third essential polysilicon structure 223 will not be effectively implanted with dopants at the same time because the metal top electrode 37 has been completed, and then cannot form heavily doped P-type polysilicon, resulting in the conductivity of the bottom electrode Insufficient, so that the storage capacitor can not play its due function
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[0046] Please refer to FIG. 5 , which is the storage capacitor structure manufacturing method developed by the present invention for omitting the CMOS manufacturing process of the lightly doped drain structure. FIG. 5( a ) shows that a buffer layer 21 is formed on the glass substrate 20 (Usually done with silicon dioxide) and an intrinsic amorphous silicon (i-a-Si) layer, a laser crystallization process is used to convert the intrinsic amorphous silicon (i-a-Si) layer into an intrinsic polysilicon (i-poly- Si) layer 22, followed by a mask lithography process to form the intrinsic polysilicon (i-poly-Si) layer 22 into a first intrinsic polysilicon structure 221 and a second intrinsic polysilicon structure as shown in Figure 5(b) 222 and the third essential polysilicon structure 223 , which are respectively used in the manufacturing process of subsequent N-channel thin film transistors, P-channel thin film transistors, and storage capacitors.
[0047] Referring to Fig. 5 (c) aga...
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Abstract
Structure of the storage capacitance includes following part: a substrate, a low electrode, an insulating layer, and an up electrode. The said low electrode and the up electrode are prepared from adulterated heterogeneous semiconductor. The method for manufacturing the storage capacitance includes steps: providing a substrate; forming a low electrode on the substrate; forming an insulating layer on the low electrode; forming an up electrode on the insulating layer; through the up electrode, carrying out first operation of embedding dopant for the low electrode in order to improve conducting power of the low electrode; carrying out second operation of embedding dopant for the up electrode in order to improve conducting power of the up electrode.
Description
[0001] This application is a divisional application of the invention patent application with the application number 02127099.6, the application date is July 29, 2002, and the invention title is "Storage Capacitor Structure and Manufacturing Method of Flat Display". technical field [0002] The invention relates to a storage capacitor structure of a flat panel display and a manufacturing method thereof, in particular to a storage capacitor structure and a manufacturing method applied to a top gate thin film transistor liquid crystal display. Background technique [0003] With the development of manufacturing technology, liquid crystal display (Liquid Crystal Display, LCD) has replaced the traditional picture tube display to become the mainstream trend of future display, among which thin film transistor liquid crystal display (TFT-LCD) is the main one. See figure 1 , which is a schematic circuit diagram of a pixel unit in a thin film transistor liquid crystal display, which is...
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IPC IPC(8): H01L21/00H01L21/02H01L21/82H01L27/00H01L27/02G02F1/133
Inventor 石安
Owner TPO DISPLAY