Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High power pulse blood fluke cercaria killing method

A high-power pulse and schistosomiasis technology, which is applied to devices for catching or killing insects, equipment for generating electric shocks, electrical components, etc., can solve problems such as not being able to be used on a large scale, poor killing effect, and environmental toxicity. To achieve the effect of solving the problem of drug resistance, a wide range of applications, and a high degree of automation

Inactive Publication Date: 2007-01-03
HUNAN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems existing in the existing methods for killing schistosomiasis cercariae, or the killing effect is not good and the environment is poisoned, or time-consuming and material-consuming and cannot be widely used, the purpose of the present invention is to provide a A high-power pulse killing method for schistosomiasis cercariae with high-efficiency and rapid killing effect, non-toxic and harmless to the environment, capable of being used in a wide range and saving time and energy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High power pulse blood fluke cercaria killing method
  • High power pulse blood fluke cercaria killing method
  • High power pulse blood fluke cercaria killing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment one: to the processing of domestic water (belonging to still waters), as figure 2 shown. The processing chamber is a cylindrical shape made of insulating material, with a height of 0.5 meters. The diameter of the top 5 and the bottom 8 is 0.5 meters. Both the top 5 and the bottom 8 are made of a sealed plate. Part 6 is sealed and connected with the whole plate, so that the whole processing chamber is kept sealed. A water inlet is opened at 0.4 meters away from the bottom 8 on the side part 6 of the treatment chamber, and a drainage hole is opened at 0.05 meters away from the bottom 8 . The high-voltage discharge electrode adopts parallel plate electrodes, the top electrode is installed on the inner side of the top 5 of the processing chamber, and the bottom electrode is installed on the inner side of the bottom 8 of the processing chamber. The water to be treated is injected into the treatment chamber through the water inlet hole. The water level 7 in the ...

Embodiment 2

[0019] Embodiment two: to the processing of open waters, as image 3 shown. The processing chamber is a rectangular parallelepiped made of insulating material, 0.5 meters high, 0.3 meters wide, and 0.4 meters long. The top 5 and bottom 8 are made into transparent grids. 6 Use four support rods to connect at intervals to maintain the transparency of the top, bottom and side of the processing chamber. The high-voltage discharge electrode adopts parallel plate electrodes, the top electrode is installed on the inner side of the top 5 of the processing chamber, and the bottom electrode is installed on the inner side of the bottom 8 of the processing chamber. Use a ship to hoist the treatment bin into a certain water area to be treated. The depth of the treatment bin is 0.2-0.35 meters. Apply a high-power pulse with an intensity of 15KV, a bipolar rectangular wave, and a frequency of 60KHZ. The treatment duration is longer than After 1 second, the ship continues to move the treatm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The high power pulse blood fluke cercaria killing method is that after the treating compartment with high voltage discharge electrodes is set inside water area to be treated, high power pulse voltage is applied across the electrodes so as to generate mechanical effect, electromagnetic effect, optical effect, thermal effect and chemical effect to kill blood fluke cercaria in water continuously. The present invention has the advantages of high killing efficiency, no toxicity, no harm, no pollution, and no drug resistance of blood fluke cercaria and others, may be used in killing blood fluke cercaria in great water area and treating water for production and life.

Description

technical field [0001] The invention relates to a method for killing harmful animals, in particular to a high-power pulse killing method for cercariae of schistosomiasis. Background technique [0002] Cercariae are an important stage of schistosomiasis infecting the human body, and killing cercariae is the key to the prevention and treatment of schistosomiasis. In the traditional control of schistosomiasis, the killing methods for cercariae mainly include drug method, storage method and heating method. The drug method is to kill the cercariae by sprinkling tea seed cakes, bleaching powder or quicklime; the storage method is to store the plague water containing the cercariae for a few days, and use the living characteristics of the cercariae to make the cercariae die naturally; The method of killing cercariae by heating water to about 60°C. The problem with the above-mentioned killing method is that the drug-killed cercariae cause the cercariae to produce drug resistance, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): A01M1/22H05C3/00
Inventor 滕召胜张薇温和曾博刘鹏孟志强张洪川杨圣洁唐秉湘
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products