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Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method

A technology for lithography and measuring beams, which is applied in semiconductor/solid-state device manufacturing, photolithography exposure equipment, microlithography exposure equipment, etc., and can solve the problems of measurement device operating sensitivity and speed limitation

Active Publication Date: 2007-01-10
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The operational sensitivity and speed of most metrology devices is limited by the radiation source used to generate the measurement beam

Method used

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  • Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method
  • Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method
  • Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method

Examples

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Embodiment Construction

[0023] figure 1 The lithography apparatus used in an embodiment of the present invention is schematically shown. The device includes:

[0024] -An illumination system (illuminator) IL configured to adjust the radiation beam B (for example, UV radiation or DUV radiation);

[0025] -A support structure (e.g., mask table) MT configured to support the patterning device (e.g., mask) MA, which is connected to a first positioning device PM configured to accurately position the patterning device according to certain parameters;

[0026] -A substrate stage (such as a wafer stage) WT configured to hold a substrate (such as a resist coated wafer) W, which is connected to a second positioning device PW configured to accurately position the substrate according to certain parameters ;with

[0027] -A projection system (for example, a refractive projection lens system) PS configured to project the pattern applied to the radiation beam B by the patterning device MA on the target portion C (for ...

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Abstract

A metrology apparatus for measuring a parameter of a microscopic structure on a substrate, the apparatus comprising a supercontinuum light source arranged to generate a measurement beam, an optical system arranged to direct the measurement beam onto the substrate and a sensor for detecting radiation reflected and / or diffracted by the structure.

Description

Technical field [0001] The present invention relates to a measurement device, in particular, a measurement method that can be used in a photolithography device, a processing device, or as an independent device, and in particular, can be used as a part of a device manufacturing method. Background technique [0002] A lithographic apparatus is a machine that can apply a desired pattern on a substrate, usually a target portion of the substrate. The lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device may be used to generate a circuit pattern to be formed on a single layer of the IC, and the patterning device is also called a mask or a reticle. The pattern can be transferred to a target portion (e.g., including a portion, one or more dies) on a substrate (e.g., a silicon wafer). The transfer of the pattern is usually achieved by imaging onto a layer of radiation-sensitive material (resist) provided on the ...

Claims

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Application Information

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IPC IPC(8): G03F7/20H01L21/00
CPCG03F7/70616G03F7/7085H01L22/12G01N21/47
Inventor H·P·M·佩勒曼斯A·J·登博夫W·M·科尔贝杰H·范德兰
Owner ASML NETHERLANDS BV
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