Method of manufacturing nand flash memory device
A non-volatile storage and device technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as high leakage current and difficult application
Inactive Publication Date: 2007-01-10
SK HYNIX INC
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However, these materials tend to have high leakage currents at high voltages and thus are not easily applied to flash memory devices that require high voltages
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[0013] see Figure 1A , a tunnel oxide film (or tunnel dielectric film) 102, a first conductive film 104 for a floating gate, and a first hard mask film 106 are sequentially formed on a semiconductor substrate on which the isolation structure 101 is formed. Bottom 100 up. The first hard mask film 106 may be formed using a nitride film to a thickness of 500 Ȧ to 6000 Ȧ, and the first conductive film 104 may be formed using a polysilicon film.
[0014] The first hard mask film 106 and a portion of the first conductive film 104 are etched. One of the following methods can be used: (1) etching only the first hard mask film 106; (2) etching the first conductive film 104 so that the first conductive film 104 having a thickness of about 50 Ȧ to 100 Ȧ remains on on the tunnel oxide film 102; or (3) etch the first conductive film 104 until the tunnel oxide film 102 is exposed. In the current practical application, the etching method (2) is used.
[0015] see Figure 1B , by using ...
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A method of manufacturing a non-volatile memory device includes forming a first conductive layer over a tunnel dielectric layer that is provided on a semiconductor substrate. A non-conductive layer is formed over the first conductive film. The non-conductive layer is etched to define a stack structure between first and second trenches, the stack structure including the first conductive layer and the non-conductive layer. A second conductive layer is formed over the stack structure and into the first and second trenches. An upper portion of the second conductive layer is etched to expose the non-conductive layer of the stack structure. The non-conductive layer of the stack structure is removed to form a three-dimensional (3-D) floating gate with an opening, the floating gate including the first and second conductive layers. A third conductive layer is provided within the 3-D floating gate via the opening of the 3-D floating gate to form a control gate. The invention improves the reliability and operating speed of the device.
Description
technical field [0001] The present invention relates to a flash memory device, more particularly, to a NAND flash memory device and a method for manufacturing the device, wherein the programming speed can be increased by enlarging the surface area of the floating gate. Background technique [0002] A conventional flash is formed by sequentially forming a tunnel oxide film, a conductive film for a floating gate, a dielectric film, and a conductive film for a control gate over a semiconductor substrate in which an isolation film is formed. memory device. [0003] As the line width of devices continues to decrease, a method of forming flash memory devices using self-aligned floating gates (hereinafter, referred to as "SAFG") has been developed. The method of forming a flash memory device using SAFG will be briefly described below. [0004] A tunnel oxide film, a first polysilicon film, and a pad nitride film are sequentially formed on a semiconductor substrate. The pad nit...
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IPC IPC(8): H01L21/8247H01L21/336H01L21/28H01L27/115H01L29/788H01L29/423H10B69/00
CPCH01L27/11551H01L27/11521H01L29/42324H01L27/11519H01L21/28273H01L27/105H01L29/40114H10B41/10H10B41/20H10B41/30
Inventor 崔殷硕金南经
Owner SK HYNIX INC