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Improved magnetron sputtering system for large-area substrates possessing a removable anode

A magnetron, anode technology, applied in sputtering, discharge tube, ion implantation and other directions, can solve the problems of structure size change, time-consuming and so on

Inactive Publication Date: 2007-01-17
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

One problem with anode structures that remain or are installed in the processing area is that, over time, target material is continuously deposited on the substrate during processing, causing structure size and shape to change over time
Likewise, operations for installing major components back into the process chamber can be very time consuming as they require precise alignment of the target with the surface of the installed anode to prevent discharge and sputtering of undesired areas on the target

Method used

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  • Improved magnetron sputtering system for large-area substrates possessing a removable anode
  • Improved magnetron sputtering system for large-area substrates possessing a removable anode
  • Improved magnetron sputtering system for large-area substrates possessing a removable anode

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Embodiment Construction

[0046] The present invention generally provides an apparatus and method for processing a substrate surface in a PVD chamber with increased anode surface area to improve deposition uniformity. In general, certain aspects of the present invention may be used in flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. The invention described below is made with reference to a physical vapor deposition system for processing large area substrates, such as the PVD system available from AKT, a division of Applied Materials, Inc. of Santa Clara, California. In one embodiment, the processing chamber is suitable for processing a surface area of ​​at least about 2000 cm 2 the substrate. In another embodiment, the processing chamber is suitable for processing a surface area of ​​at least about 19,500 cm 2 (eg 1300mm×1500mm) substrate. However, it should be understood that the apparatus and method may also be used in other system ...

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Abstract

The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

Description

technical field [0001] Embodiments of the invention generally relate to substrate plasma processing apparatus and methods suitable for depositing films on substrate surfaces. Background technique [0002] Physical vapor deposition (PVD) using a magnetron is a primary method of depositing metals onto semiconductor integrated circuits to form electrical connections and other structures in integrated circuit devices. During PVD processing, the target is electrically biased so that ions generated in the processing region can bombard the target surface with sufficient energy to dislodge atoms from the target. The process of biasing the target such that a plasma is generated causing ion bombardment and removal of atoms from the target surface is generally referred to as sputtering. The sputtered atoms typically move towards the sputter coated wafer, and the sputtered atoms are deposited on the wafer. Alternatively, the atoms react with another gas in the plasma, such as nitrogen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54
CPCH01J37/32697H01J37/3408H01J37/3447H01J37/3438C23C14/35H01L21/02631H01L21/67207C23C14/14
Inventor 细川明广海民和·H·勒稻川真约翰·怀特
Owner APPLIED MATERIALS INC