Image sensor pixel having a lateral doping profile formed with indium doping

Abstract

An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

Description

technical field [0001] The present invention relates to image sensors, and more particularly, the present invention relates to an image sensor including indium-doped pixels. Background technique [0002] Image sensors have become ubiquitous, and they are widely used in digital cameras, cellular phones, security cameras, medical equipment, automobiles, and other applications. The technology of manufacturing image sensors, especially CMOS (Complementary Metal Oxide Semiconductor) image sensors continues to develop rapidly. For example, the requirements of high resolution and low power consumption promote the further miniaturization and integration of image sensors. [0003] Each pixel of an image sensor typically includes a photosensitive element, such as a photodiode, and one or more transistors that read out signals from the photosensitive element. For example, pass transistors are often employed in pixels of four-transistor (or more) designs. The transfer transistor has ...

AI Technical Summary

Problems solved by technology

However, it has been found that the introduction of lateral gradient doping will lead to photodiode N - Compensation not required for implantation

While this lateral domain aids transmission through the transfer gate, this doping and the photosensitive element / transfer gate interface also does make barrier and / or well performance worse

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