48 results about "Indium doping" patented technology

A method for producing composite powders based on silver-tin oxide, by chemically reductive precipitation of silver onto particulate tin oxide. A solution of a silver compound and a solution of a reducing agent are simultaneously added in stoichiometrically equivalent amounts, separately and continuously with intensive mixing, to an aqueous suspension of tin oxide. The resulting composite powders have very high homogeneity, and can be processed to make electrical contact materials. The method is particularly suitable for producing composite powders based on silver-tin oxide doped with indium oxide, to be used in the manufacture of electrical contact materials.

A photovoltaic device includes a first contact layer formed on a substrate. An absorber layer includes Cu—Zn—Sn—S(Se) (CZTSSe) on the first contact layer. A buffer layer is formed in contact with the absorber layer. Metal dopants are dispersed in a junction region between the absorber layer and the buffer layer. The metal dopants have a valence between the absorber layer and the buffer layer to increase junction potential. A transparent conductive contact layer is formed over the buffer layer.

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and / or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

The invention provides a method for growing an LED epitaxial structure, comprising a step 1 of processing a sapphire substrate; a step 2 of growing low-temperature buffer layer gallium nitride and irregular islands on the substrate; a step 3 of growing a non-doped nitride gallium layer; a step 4 of growing a silicon-doped N-type gallium nitride layer; a step 5 of growing a multiple quantum well layer, including a step 5.1 of growing a silicon-doped low-temperature Inx1Ga (1-x1) N well layer, a step 5.2 of growing an indium-doped high-temperature Inx2Ga(1-x2) N well layer, a step 5.3 of growinga low-temperature gallium nitride barrier layer, and a step 5.4 of growing a high-temperature gallium nitride barrier layer; a step 6 of growing a magnesium-doped aluminum gallium nitride layer; a step 7 of growing a magnesium-doped P-type gallium nitride layer; and a step 8 of keeping the temperature at 650 680 degrees centigrade for 20 to 30 minutes, turning off a heating and gas supply system, and cooling a product with a furnace. The method can improve the light-emitting efficiency of the LED and significantly reduce the warpage of the LED epitaxial wafer.

The invention provides a preparation method of crystalline silicon. The preparation method comprises the following steps: charging a silicon material into a crucible for growing crystalline silicon, at the same time putting doping agents into the crucible, putting the crucible into a furnace for growing the crystalline silicon, wherein the doping agents comprise a boron doping agent and an indium doping agent; the boron doping agent is one or more of a single substance, an alloy and nitride containing the boron element; the indium doping agent is one or more of a single substance, an alloy and nitride containing the indium element; the atomic volume concentration of the boron element and the indium element in a silicon material are respectively 10<14>-10<17>atmos / cm<3> and 10<14>-10<18>atmos / cm<3>; in the presence of a protecting atmosphere, heating to completely melt the silicon material and the doping agents in the crucible so as to obtain silicon melt, adjusting the crystalline silicon growth parameters, and enabling the silicon melt to grow crystal, thereby obtaining the crystalline silicon. By adopting the preparation method, the problems that in the prior art molecules of crystalline silicon prepared through boron-gallium codoping are short in service life and the crystalline silicon yield is relatively low are solved. The invention further provides the crystalline silicon.