47 results about "Indium doping" patented technology

A method for producing composite powders based on silver-tin oxide, by chemically reductive precipitation of silver onto particulate tin oxide. A solution of a silver compound and a solution of a reducing agent are simultaneously added in stoichiometrically equivalent amounts, separately and continuously with intensive mixing, to an aqueous suspension of tin oxide. The resulting composite powders have very high homogeneity, and can be processed to make electrical contact materials. The method is particularly suitable for producing composite powders based on silver-tin oxide doped with indium oxide, to be used in the manufacture of electrical contact materials.

The invention discloses a method of increasing the properties of the gallium nitride-based transistor material and device with indium doping and applies in the field of making gallium nitride-based HEMT or HFET materials and devices. The method and process is to form the gallium nitride-based high electron mobility transistor or heterostructure field effect transistor materials on SiC or Si single crystal substrate grown by metal-organic chemical vapor deposition epitaxial growth system. After the AlN or AlGaN nucleating layer and the GaN buffer layer are grown on the SiC or Si single crystal substrate, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN capped layer are grown, and trimethyl indium is added in the growth atmosphere to do epitaxial growth with indium doping. The dislocation of the material or device made by the method of the invention is reduced greatly. The invention improves the interfacial smoothness, increases the electron mobility of the material, increases the growth window, ensures the material grow easier, improves the current collapse of the device, reduces the leakage current and increases transconductance and gain and increases the output power of microwave power devices.

A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

A photovoltaic device includes a first contact layer formed on a substrate. An absorber layer includes Cu—Zn—Sn—S(Se) (CZTSSe) on the first contact layer. A buffer layer is formed in contact with the absorber layer. Metal dopants are dispersed in a junction region between the absorber layer and the buffer layer. The metal dopants have a valence between the absorber layer and the buffer layer to increase junction potential. A transparent conductive contact layer is formed over the buffer layer.

The invention relates to an indium doped zinc oxide transparent conducting film and a preparation method thereof. In the method, a ZnO:In transparent conducting film with a polycrystal structure is prepared on a common alkali glass and quartz glass substrate by adopting a multitarget co-sputtering magnetron sputtering technology and adopting a zinc oxide ceramic target and indium metal target co-sputtering method. In the process condition, the pressure of the argon and oxygen mixed working gas is 0.2-2.0Pa; the volume ratio of the oxygen to the argon is 0-0.2; the sputtering power of a zinc oxide target and an indium target are respectively 50-200W and 5-40W; the substrate temperature is room temperature-500 DEG C; and the bias voltage is 0-negative 200V. The prepared transparent conducting film reduces indium atomic number content to 2 percent, has favorable conducting performance, transmissivity larger than 90 percent at 400-1,100nm and can be widely applied to the fields of solar batteries, panel display, and the like instead of ITO (Indium Tin Oxide).

The invention relates to the field of seed storage and packaging, and provides a manufacturing method of an antibacterial packaging material for seed storage, and the antibacterial packaging material comprises an antimony-doped tin oxide nanoparticle material and an indium-doped tin oxide nanoparticle material; the manufacturing method of the antibacterial packaging material comprises the following manufacturing steps: S1, preparing an antimony-doped tin oxide nanoparticle material; s2, preparing an indium-doped tin oxide nano particle material; s3, film blowing: three-layer co-extrusion is adopted, a film body is made of a PE material, and antimony-doped tin oxide and indium-doped tin oxide nanoparticles are added into the plastic film body; growth of mould around seeds can be remarkably inhibited, and the antibacterial time is long. Meanwhile, the used materials are low in raw material cost, simple in process, easy to put into industrial production and non-toxic, and use of nano-silver antibacterial materials with potential safety risks and very high cost is avoided.

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and / or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

The invention discloses an active pixel. The transmission gate of the active pixel has a polysilicon gate circuit doped with indium. The active pixel of the present invention includes a photosensitive element located in the semiconductor base and an n-type floating node located in the semiconductor base. An n-channel transfer transistor with a transfer gate is formed between the photosensitive element and the floating node. The base body of the pixel according to the invention has a lateral doping gradient of indium dopant.

The invention provides a method for growing an LED epitaxial structure, comprising a step 1 of processing a sapphire substrate; a step 2 of growing low-temperature buffer layer gallium nitride and irregular islands on the substrate; a step 3 of growing a non-doped nitride gallium layer; a step 4 of growing a silicon-doped N-type gallium nitride layer; a step 5 of growing a multiple quantum well layer, including a step 5.1 of growing a silicon-doped low-temperature Inx1Ga (1-x1) N well layer, a step 5.2 of growing an indium-doped high-temperature Inx2Ga(1-x2) N well layer, a step 5.3 of growinga low-temperature gallium nitride barrier layer, and a step 5.4 of growing a high-temperature gallium nitride barrier layer; a step 6 of growing a magnesium-doped aluminum gallium nitride layer; a step 7 of growing a magnesium-doped P-type gallium nitride layer; and a step 8 of keeping the temperature at 650 680 degrees centigrade for 20 to 30 minutes, turning off a heating and gas supply system, and cooling a product with a furnace. The method can improve the light-emitting efficiency of the LED and significantly reduce the warpage of the LED epitaxial wafer.

The invention relates to the field of nano-material preparation, and aims to provide a method for preparing indium-doped Zn2SnO4 nano-wires. The method includes adding organic zinc salt into ammoniumoxalate aqueous solution and then adding indium salt into the ammonium oxalate aqueous solution; stirring the organic zinc salt and the indium salt in the ammonium oxalate aqueous solution under waterbath conditions to form uniform solution; transferring the uniform solution into reaction kettles, carrying out constant-temperature hydrothermal reaction, and then naturally cooling reaction products until the temperatures of the reaction products reach the room temperature; adding tin salt into the reaction products and regulating a pH (potential of hydrogen) value by ammonia water; placing thereaction kettles in water bath, carrying out stirring reaction, carrying out centrifugal treatment on obtained solution and carrying out cleaning by hypochlorous acid; drying solid products to obtainthe indium-doped Zn2SnO4 nano-wires. The method has the advantages that indium elements are doped, accordingly, crystal structures of zinc stannate can be improved, and the electric conductivity canbe enhanced; the bonding properties of the zinc stannate and metal silver can be improved, and accordingly the electric and mechanical properties of silver-based electrically conductive alloy materials can be improved; the indium-doped Zn2SnO4 nano-wires can be prepared by the aid of one-step hydrothermal processes and are high in purity, homogenous in size and good in dispersibility; processes for the indium-doped Zn2SnO4 nano-wires are simple, and reaction conditions are easy to control; the method is low in cost and suitable for large-scale industrial production.

The invention discloses lithium vanadate with an indium and cerium or indium-doped nanofiber structure as well as a preparation method and application of the lithium vanadate. A synthesis mode is simple and easy to control. Firstly, an indium and cerium or indium-doped Li3VO4 precursor is synthesized by adopting electrostatic spinning, and calcining is performed in inert gas to obtain an indium and cerium or indium-doped Li3VO4 material with a fiber structure. A unique fiber network conductive structure not only facilitates effective infiltration of an electrolyte, but also enables the electrolyte to be in full contact with an active substance, so that the electrochemical performance of the material is improved. The fiber network-shaped indium and cerium or indium-doped Li3VO4 prepared by the method has good electrochemical performance when being used as a lithium ion electrode material, the process is simple, and the condition is mild.

The invention belongs to the field of solar cell preparation, and in particular relates to a method for improving the efficiency of a flexible copper indium gallium selenium thin film solar cell. The specific steps are as follows: first sputter the molybdenum electrode on the substrate, then prepare the CIGSe precursor solution, spin-coat the precursor solution on the substrate to prepare the CIGSe prefabricated film, heat and selenize annealing to obtain the CIGSe film; then prepare the CIGSe film on the CIGSe film cadmium sulfide thin film, then sequentially sputtering zinc oxide and indium-doped tin oxide thin films on the cadmium sulfide thin film, and finally performing silver electrode evaporation to obtain a flexible CIGSe thin film solar cell. By introducing bismuth and potassium compounds into the CIGSe precursor solution, the growth of CIGSe crystals is promoted, grain boundary defects are passivated, and the performance of CIGSe solar cells is improved. The invention is environmentally friendly, safe and low in cost, and effectively improves the efficiency of the CIGSe thin film solar cell.

The invention provides a preparation method of crystalline silicon. The preparation method comprises the following steps: charging a silicon material into a crucible for growing crystalline silicon, at the same time putting doping agents into the crucible, putting the crucible into a furnace for growing the crystalline silicon, wherein the doping agents comprise a boron doping agent and an indium doping agent; the boron doping agent is one or more of a single substance, an alloy and nitride containing the boron element; the indium doping agent is one or more of a single substance, an alloy and nitride containing the indium element; the atomic volume concentration of the boron element and the indium element in a silicon material are respectively 10<14>-10<17>atmos / cm<3> and 10<14>-10<18>atmos / cm<3>; in the presence of a protecting atmosphere, heating to completely melt the silicon material and the doping agents in the crucible so as to obtain silicon melt, adjusting the crystalline silicon growth parameters, and enabling the silicon melt to grow crystal, thereby obtaining the crystalline silicon. By adopting the preparation method, the problems that in the prior art molecules of crystalline silicon prepared through boron-gallium codoping are short in service life and the crystalline silicon yield is relatively low are solved. The invention further provides the crystalline silicon.

A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO). The material includes at least ATO and / or ITO.